Photoelectrochemical Properties Of Poly(3,4-ethylenedioxythiophene)

dc.creatorGirotto E.M.
dc.creatorGazotti W.A.
dc.creatorDe Paoli M.-A.
dc.date2000
dc.date2015-06-30T19:51:05Z
dc.date2015-11-26T14:47:16Z
dc.date2015-06-30T19:51:05Z
dc.date2015-11-26T14:47:16Z
dc.date.accessioned2018-03-28T21:57:34Z
dc.date.available2018-03-28T21:57:34Z
dc.identifier
dc.identifierJournal Of Physical Chemistry B. , v. 104, n. 26, p. 6124 - 6127, 2000.
dc.identifier15206106
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0034225652&partnerID=40&md5=615d22e397e423c2d3a37a00a3ead608
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/107277
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/107277
dc.identifier2-s2.0-0034225652
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1253203
dc.descriptionThe photoelectrochemical properties of poly(3,4-ethylene dioxythiophene)/ poly(styrene sulfonate) in contact with an electrolytic solution containing a redox couple were studied using the theories for the semiconductor-electrolyte interface. When this polymer-electrolyte interface is illuminated with hv > Eg (gap energy) it exhibits cathodic photocurrent typical of p-type semiconductors, and the flat band potential, density of majority carriers, and the depletion layer thickness can be determined. To complete the band energy diagram of this polymer-electrolyte interface we obtained the band gap energy through the absorption and photocurrent spectra. The relatively low band gap energy (1.5 eV) and the photoeffects observed at the interface suggest its use as the absorbing material in photoelectrochemical cells. © 2000 American Chemical Society.
dc.description104
dc.description26
dc.description6124
dc.description6127
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dc.languageen
dc.publisher
dc.relationJournal of Physical Chemistry B
dc.rightsfechado
dc.sourceScopus
dc.titlePhotoelectrochemical Properties Of Poly(3,4-ethylenedioxythiophene)
dc.typeArtículos de revistas


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