dc.creatorLemos V.
dc.creatorVazquez-Lopez C.
dc.creatorCerdeira F.
dc.date1993
dc.date2015-06-30T14:32:50Z
dc.date2015-11-26T14:43:55Z
dc.date2015-06-30T14:32:50Z
dc.date2015-11-26T14:43:55Z
dc.date.accessioned2018-03-28T21:52:22Z
dc.date.available2018-03-28T21:52:22Z
dc.identifier
dc.identifierSuperlattices And Microstructures. , v. 13, n. 2, p. 189 - , 1993.
dc.identifier7496036
dc.identifier10.1006/spmi.1993.1036
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-44949266219&partnerID=40&md5=4b36c505eca312bc6f3a39150ef60770
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/99792
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/99792
dc.identifier2-s2.0-44949266219
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1251895
dc.descriptionWe performed a series of Raman and photoreflectance measurements on several InxGa1-xAs/GaAs strained layer superlattices of the same period but of different alloy compositions and substrate orientations. Both types of measurements are used in order to estimate the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination. © 1993 Academic Press. All rights reserved.
dc.description13
dc.description2
dc.description189
dc.description
dc.languageen
dc.publisher
dc.relationSuperlattices and Microstructures
dc.rightsfechado
dc.sourceScopus
dc.titleStrain Measurements In Inxga1-xas/gaas Strained-layer Superlattices By Photomodulated Reflectance
dc.typeArtículos de revistas


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