dc.creatorBonfim Marlio J.
dc.creatorSwart Jacobus W.
dc.creatorVelasco Christian E.M.
dc.creatorOkura Juscelino H.
dc.creatorVerdonck Patrick B.
dc.date1993
dc.date2015-06-30T14:32:28Z
dc.date2015-11-26T14:43:45Z
dc.date2015-06-30T14:32:28Z
dc.date2015-11-26T14:43:45Z
dc.date.accessioned2018-03-28T21:52:04Z
dc.date.available2018-03-28T21:52:04Z
dc.identifier1558991999
dc.identifierMaterials Research Society Symposium Proceedings. Publ By Materials Research Society, Pittsburgh, Pa, United States, v. 303, n. , p. 407 - 412, 1993.
dc.identifier2729172
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0027867442&partnerID=40&md5=808a47b7bb26f985a7fb58516d6edc03
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/99744
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/99744
dc.identifier2-s2.0-0027867442
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1251818
dc.descriptionA multiprocess CVD system with the following main features is designed and constructed: the wafer holder is made of a Si wafer with diameter larger than the process wafers. This larger holder produces a better temperature uniformity on the process wafer. A good thermal contact between holder and process wafer is obtained by an electrostatic clamp. The holder supports the process wafer facing down. A remote plasma is produced in a small chamber inside the process chamber. The 100 KHz RF frequency keeps the system very simple and cheap while still reasonable ionization is achieved. SiO 2 films were deposited using SiH 4 and O 2 with and without remote plasma of O 2. At low temperatures and 1.5 Torr, process activation energies of about 0.9 and 0.3 e V were obtained respectively.
dc.description303
dc.description
dc.description407
dc.description412
dc.languageen
dc.publisherPubl by Materials Research Society, Pittsburgh, PA, United States
dc.relationMaterials Research Society Symposium Proceedings
dc.rightsfechado
dc.sourceScopus
dc.titleLow Frequency Remote Plasma Rapid Thermal Cvd System With Face Down Electrostatic Clamp Wafer Holder
dc.typeActas de congresos


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