Artículos de revistas
Electroreflectance Study Of The E1 And E0 Optical Transitions In Thin Ge/si Superlattices
Registro en:
Solid State Communications. , v. 86, n. 10, p. 637 - 642, 1993.
381098
10.1016/0038-1098(93)90830-G
2-s2.0-0027609166
Autor
Rodrigues P.A.M.
Cerdeira F.
Cardona M.
Kasper E.
Kibbel H.
Institución
Resumen
We report low temperature (77 K) eletroreflectance measurements on a series of GenSim strain-symmetrized superlattices. The results obtained for samples with n + m ≤ 10 are consistent with band structure calculations performed using the linear muffin-tin orbitals method as well as data from previous ellipsometric measurements. Results for superlattices with n + m ≥ 20 can be explained by a straightforward extension of this conceptual scheme. © 1993. 86 10 637 642 Kasper, Schäffler, (1991) Semiconductor and Semimetals, 33, p. 223. , T.P. Pearsall, Academic, New York Pearsall, (1989) CRC Crit. Rev. Solid State Mater. Sci., 15, p. 551 Schmid, Christensen, Alouani, Cardona, (1991) Phys. Rev., 43 B, p. 14597. , and references cited therein Pearsall, Bevk, Feldman, Bonar, Mannaerts, Ourmazd, (1987) Phys. Rev. Lett., 58, p. 729 Asami, Miki, Sakamoto, Sakamoto, Gonda, Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy (1990) Japanese Journal of Applied Physics, 29, p. L 381 Cerdeira, Alonso, Niles, Garriga, Cardina, Kasper, Kibbel, (1989) Phys. Rev., 40 B, p. 1361 Zachai, Eberl, Abstreiter, Kasper, Kibbel, (1990) Phys. Rev. Lett., 64, p. 1055 Schmid, Lukeš, Christensen, Alouani, Cardona, Kasper, Kibbel, Presting, (1990) Phys. Rev. Lett., 65, p. 1933 Schmid, Humlíček, Lukeš, Cardona, Presting, Kibbel, Kasper, Abstreiter, (1992) Phys. Rev., 45 B, p. 6793 Kasper, Kibbel, Jorke, Brugger, Friess, Abstreiter, (1988) Phys. Rev., 38 B, p. 3599 Alonso, Cerdeira, Niles, Cardona, Kasper, Kibbel, (1989) J. Appl. Phys., 66, p. 5645 Aspnes, (1980) Handbook on Semiconductors, p. 109. , T.S. Moss, North-Holland, New York Garriga, Cardona, Christensen, Lautenschlager, Isu, Ploog, (1987) Phys. Rev., 36 B, p. 3254 Vazquez-Lopez, Ribeiro, Cerdiera, Motisuke, Sacilotti, Roth, (1991) J. Appl. Phys., 69, p. 7836 Bastard, Brum, Electronic states in semiconductor heterostructures (1986) IEEE Journal of Quantum Electronics, 22, p. 1625 Rodriguez, Cerdeira, Bean, Photoreflectance in Ge/Ge0.7Si0.3 strained-layer superlattices (1992) Physical Review B, 46, p. 15263 See Ref. [9] for a thorough discussion of this pointCerdeira, Pinczuk, Chiu, Tsang, (1985) Phys. Rev., 32 B, p. 1390 This splitting is only significant n + m ⩾ 20. For the three samples with n + m ⩽ 10 both light and heavy hole transitions fall within one broadening parameter (Γ) of one another