dc.creatorSantiago R.B.
dc.creatorOliveira L.E.
dc.creatorD'Albuquerque E Castro J.
dc.date1992
dc.date2015-06-30T14:20:45Z
dc.date2015-11-26T14:42:51Z
dc.date2015-06-30T14:20:45Z
dc.date2015-11-26T14:42:51Z
dc.date.accessioned2018-03-28T21:50:39Z
dc.date.available2018-03-28T21:50:39Z
dc.identifier
dc.identifierPhysical Review B. , v. 46, n. 7, p. 4041 - 4046, 1992.
dc.identifier1631829
dc.identifier10.1103/PhysRevB.46.4041
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0000612010&partnerID=40&md5=901db7695fabdfe07147eba241f49605
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/99399
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/99399
dc.identifier2-s2.0-0000612010
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1251442
dc.descriptionImpurity-related optical-absorption spectra for GaAs-(Ga,Al)As quantum wells under an externally applied longitudinal electric field are investigated. A variational procedure in the effective-mass approximation is used in the evaluation of the impurity binding energies and wave functions. Effects of the variation of both field intensity and well width on the donor- and acceptor-related absorption line shapes are analyzed in the cases of infinite- and finite-barrier potentials. The results show that the absorption spectra present an edge associated with the maximum value of the impurity binding energy and two van Hove-like singularities corresponding to impurities positioned at the two edges of the well. As the field intensity is increased, the absorption spectra are shifted towards lower energies, with their intensities reduced, and the relative importance of the van Hove-like singularities is changed. Such effects become more pronounced for larger widths of the quantum wells. © 1992 The American Physical Society.
dc.description46
dc.description7
dc.description4041
dc.description4046
dc.languageen
dc.publisher
dc.relationPhysical Review B
dc.rightsaberto
dc.sourceScopus
dc.titleImpurity-related Optical Absorption From Gaas-(ga,al)as Quantum Wells Under An Applied Electric Field
dc.typeArtículos de revistas


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