| dc.creator | Lagoia Fonseca Jr. P.N. | |
| dc.creator | Kretly L.C. | |
| dc.date | 2008 | |
| dc.date | 2015-06-30T19:20:01Z | |
| dc.date | 2015-11-26T14:42:17Z | |
| dc.date | 2015-06-30T19:20:01Z | |
| dc.date | 2015-11-26T14:42:17Z | |
| dc.date.accessioned | 2018-03-28T21:49:45Z | |
| dc.date.available | 2018-03-28T21:49:45Z | |
| dc.identifier | 9781424418794 | |
| dc.identifier | 2008 International Conference On Microwave And Millimeter Wave Technology Proceedings, Icmmt. , v. 2, n. , p. 580 - 583, 2008. | |
| dc.identifier | | |
| dc.identifier | 10.1109/ICMMT.2008.4540459 | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-51349117354&partnerID=40&md5=ac27d971446d0829922d8e8f122c7a71 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/105798 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/105798 | |
| dc.identifier | 2-s2.0-51349117354 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1251198 | |
| dc.description | This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This technique can be applied to any BiCMOS technology with no additional process. ©2008 IEEE. | |
| dc.description | 2 | |
| dc.description | | |
| dc.description | 580 | |
| dc.description | 583 | |
| dc.description | Capovilla, C.E., Tavora, A.S.A., Kretly, L.C., A fully integrated 2.5GHz band CMOS Low Noise Amplifier with multiple switched inputs for diversity wireless communications (2007) IEEE MTT-S Microwave and Optoelectronic Conference, pp. 625-629. , Oct | |
| dc.description | M. Usami, M. Ohki, The p-chip: an ultra small 2.45GHz, RFID chip for ubiquitous recognition applications, IEICE Trans. Electron., e86-c,no.4, pp. 521-528, Apr 2003C. P.Yue, C.Ryu, J.Lau, T. H.Lee, and S. S.Wong, A physical model for planar spiral inductors on silicon, Proc. IEEE Int. Electron Devices Meeting, San Francisco, CA, 1996Craninckx, J., Steyaert, M., A 1.8-GHz Low-Phase- Noise CMOS VCO Using Optimized Hollow Spiral Inductors (1997) IEEE Journal of Solid-State Circuits, 32 (5), pp. 736-744. , May | |
| dc.description | Yue, C.P., Wong, S.S., On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC's (1997) Symposium on VLSI Circuits, pp. 85-86 | |
| dc.description | Sun, Y., van Zejl, Y.H.W., Tauritz, J.L., Baets, R.G.F., Suspended membrane inductors and capacitors for application in siliscom MMIC's (1996) IEEE Microwave and Millimetre-Wave Monolithic Circuits Symposium Digest, pp. 99-102. , Jun | |
| dc.description | Yim, S.-M., Chen, T., O, K.K., The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology (2000) Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 157-160. , Sept | |
| dc.description | E. Ragonese, A. Scuderi, T. and G. Palmisano, Experimental comparison of substrate structures for inductors and transformers, in 12th IEEE Mediterranean Electrotechnical Conference (MELECON 2004), Dubrovnik, Croatia, pp. 143-146, May 2004Ragonese, E., Girlando, G., Palmisano, G., A very accurate design of monolithic inductors in a 2D EM simulator (2002) Proc. IEEE Int. Conf. on Electronics, Circuits and Systems (ICECS 2002), pp. 1199-1202. , Dubrovnik, Croatia, pp, Sept | |
| dc.description | Austriamicrosystems, 0.35 m HBT BiCMOS Process Parameters, , Application Note ENG-219 Rev. 3.0 | |
| dc.description | http://www.sonnetusa.com, Sonnet Software Inc. AvailableBurghartz, J.N., Ruehli, A.E., Jenkins, K.A., Soyuer, M., Nguyen-Ngoc, D., Novel substrate contact structure for high-Q silicon-integrated spiral inductors (1997) Tech. Dig. Int. Electron Devices Meeting (IEDM), pp. 55-58 | |
| dc.description | Mernyei, F., Darrer, F., Pardoen, M., Sibrai, A., Reducing the Substrate Losses of RF Integrated Inductors (1998) IEEE Microwave and Guided Wave Letts, 8 (9), pp. 300-301 | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | Rf Integrated Inductor: Improving Q-factor With Double Ground Shield For Bicmos Technology | |
| dc.type | Actas de congresos | |
