Artículos de revistas
Model Of The Electronic Structure Of Amorphous Germanium Tin Alloys
Registro en:
Solid State Communications. , v. 74, n. 2, p. 103 - 108, 1990.
381098
10.1016/0038-1098(90)90614-H
2-s2.0-0025415705
Autor
Barrio R.A.
Taguena-Martinez J.
Castillo-Alvarado F.L.
Chambouleyron I.
Institución
Resumen
The electronic structure of an amorphous Ge-Sn alloy is modelled by an extension of the coherent potential approximation (CPA), which takes into account the chemical order and the absence of Sn dangling bonds found experimentally. In accordance with experiment, the present calculations predict a smooth linear decrease of the band gap with tin concentration. With respect to transport properties, however, an important difference appears. No electronic levels are theoretically found in the band-gap, which seem to be present in deposited samples, as deduced from conductivity vs temperature measurements. Therefore, these defect centers should arise from local bonding configurations other than the pure tetrahedral substitutional one. © 1990. 74 2 103 108 Amorphous Silicon Technology, (1988) Proc. Materials Research Society, 118. , See for instance, A. Madan, M.J. Thompson, P.C. Taylor, P.G. de Comber, Y. Hamakawa, M.R.S, Pittsburgh, PA Jackson, (1958) Trans. Conf. on the Use of Solar Energy, , An extensive literature exists on these structures, which were proposed by, University of Arizona Press, Tucson, AZ, in the Proceedings of the IEEE Photovoltaic Specialists Conferences, Ed. IEEE, New York Kuwano, Ohnishi, Nishiwaki, Tsuda, Fukatsu, Nakashima, Tarui, (1982) Proc. 16th IEEE Photovoltaic Specialists Conf., p. 1338. , Ed. IEEE, New York Chambouleyron, Marques, (1989) J. Appl. Phys., 65, p. 1591 Amorphous Silicon Technology, (1988) Proc. Materials Research Society, 118, p. 685. , See also, A. Madan, M.J. Thompson, P.C. Taylor, P.G. Le Comber, Y. Hamakawa, M.R.S, Pittsburgh, PA Trumbore, Solid Solubilities and Electrical Properties of Tin in Germanium Single Crystals (1956) Journal of The Electrochemical Society, 103, p. 597 Verie, Rochette, Rebuillat, (1981) J. Phys. C, 10, p. 667. , See for example Temkin, Connell, Paul, (1972) Solid State Commun., 11, p. 1591 Chambouleyron, Marques, de Souza, Baumvol, (1988) J. Appl. Phys., 63, p. 5596 Castillo-Alvarado, Contreras-Puente, Barrio, (1988) J. Phys. C, 21, p. 1887 Barrio, Carriço, Sanjurjo, Chambouleyron, (1989) J. Phys. Condens. Matter, 1, p. 69 Tagüeña-Martinez, Barrio, Castillo-Alvarado, Hydrogenated amorphous silicon as a binary alloy (1987) Journal of Physics C: Solid State Physics, 20, p. 1679 Carriço, Elliott, Barrio, Model of electronic states at the Si-SiO_{2} interface (1986) Physical Review B, 34 B, p. 872 Barrio, Elliott, (1982) J. Phys. C, 15, p. 4493 Chadi, Cohen, (1975) Phys. Status Solidi (b), 68, p. 405. , Vol. 1 Mailhiot, Duke, Chadi, (1985) Phys. Rev. B, 31, p. 2213 Yndurain, Barrio, Elliott, Thorpe, (1983) Phys. Rev. B, 28, p. 3576 Rochow, Abel, The Chemistry of Ge, Sn and Pb (1975) Texts in Inorganic Chemistry, 14. , Pergamon Press, U.K Ley, Kawalczyk, Pollak, Shirley, (1972) Phys. Rev. Lett., 24, p. 1008 Chambouleyron, Marques, Dionisio, Baumvol, Barrio, (1989) J. Appl. Phys., 66, p. 2083 R.A. Barrio, I. Chambouleyron & J. Tagüeña-Martinez, unpublished