Artículos de revistas
Density Of States And Optical-absorption Spectra Of Shallow Impurities In Quantum Wells Under The Influence Of A Longitudinal Electric Field
Registro en:
Physical Review B. , v. 41, n. 14, p. 10043 - 10048, 1990.
1631829
10.1103/PhysRevB.41.10043
2-s2.0-33644479336
Autor
Weber G.
Institución
Resumen
We have calculated the densities of states and the optical-absorption spectra of shallow donors and acceptors in GaAs-(Ga,Al)As quantum wells under the influence of a constant electric field applied parallel to the growth axis. The impurity binding energies were calculated as functions of the impurity position in a quantum well of infinite depth, where we have used a variational procedure within the effective-mass approximation. The main feature found was a quenching of one of the peaks due to interface impurities at moderate electric fields. We compare these optical-absorption spectra with previous calculations in the absence of an electric field. © 1990 The American Physical Society. 41 14 10043 10048