Synthesis And Characterization Of Zno And Zno:ga Films And Their Application In Dye-sensitized Solar Cells

dc.creatorDe Souza Goncalves A.
dc.creatorDavolos M.R.
dc.creatorMasaki N.
dc.creatorYanagida S.
dc.creatorMorandeira A.
dc.creatorDurrant J.R.
dc.creatorFreitas J.N.
dc.creatorNogueira A.F.
dc.date2008
dc.date2015-06-30T19:13:28Z
dc.date2015-11-26T14:39:38Z
dc.date2015-06-30T19:13:28Z
dc.date2015-11-26T14:39:38Z
dc.date.accessioned2018-03-28T21:45:26Z
dc.date.available2018-03-28T21:45:26Z
dc.identifier
dc.identifierDalton Transactions. , v. , n. 11, p. 1487 - 1491, 2008.
dc.identifier14779226
dc.identifier10.1039/b716724e
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-40349103699&partnerID=40&md5=55ce3958596b2ab99c87f14a99e488b0
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/105307
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/105307
dc.identifier2-s2.0-40349103699
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1250078
dc.descriptionHighly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga 3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa 2O 4), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga 3+, according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO:Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm -2), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device. © 2008 The Royal Society of Chemistry.
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dc.languageen
dc.publisher
dc.relationDalton Transactions
dc.rightsaberto
dc.sourceScopus
dc.titleSynthesis And Characterization Of Zno And Zno:ga Films And Their Application In Dye-sensitized Solar Cells
dc.typeArtículos de revistas


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