Actas de congresos
Electrical Characterization Of Platinum Thin Films Deposited By Focused Ion Beam
Registro en:
9781566775656
Ecs Transactions. , v. 9, n. 1, p. 235 - 241, 2007.
19385862
10.1149/1.2766894
2-s2.0-45249105524
Autor
Da Silva M.M.
Vaz A.R.
Moshkalev S.A.
Swart J.W.
Institución
Resumen
Dual beam FIB (focused ion beam)/SEM (scanning elelctron microscope) systems are commonly used for imaging, selective etch and deposition of materials like platinum. The paper presents the results of electrical characterization of platinum thin films deposited by focused ion beam. For measurements, two types of test structures were fabricated: (i) 150×150 μm and 20×20 μm squares with thickness of 5, 10, 30 and 100 nm, and (ii) 30 μm long resistors with variable cross - section (50 nm × 50nm to 1 μm × 1μm). The Pt film resistivity has been measured by a four points probe method, to give the value of ∼10 × 10 -4 Ω.cm. © The Electrochemical Society. 9 1 235 241 Selinger, R.L., Fleming, W.P., (1974) Journal of Applied Physics, 45, pp. 1416-1422 Go, M.S.H., Focused ion beam fabrication of junctions in the charge density wave conductor NbSe, (2001), M.S. thesis, Delft Univ. of Technol, Delft, The NetherlandsTao, T., Ro, J.S., Melngailis, J., Xue, Z., Kaesz, H.D., (1990) J. Vac. Sci. Technol, B 8 (6), pp. 1826-1829 van der Pauw, L.J., (1958) Phillips Res. Rep, 13, pp. 1-9 Tay, M., Li, K., Wu, Y., (2005) J. Vac. Sci. Technol, B 8 (23 4), pp. 1412-1416 Kanagawa, T., Hobara, R., Matsuda, I., Tanikawa, T., Natori, A., Hasegawa, S., (2003) Physical Review Letters, 91 (3) Smith, S., Walton, A.J., Bond, S., Ross, A.W.S., Stevenson, J.T.M., Gundlach, A.M., (2003) IEEE Transactions on Semiconductor Manufacturing, 16 (2), pp. 199-206 Ko, D., Park, Y.M., Kim, S., Kim, Y., (2007) Ultramicroscopy, 107, pp. 368-373 Salvadori, M.C., Vaz, A.R., Farias, R.J.C., Cattani, M., (2004) Surface Review and Letters, 11 (2), pp. 223-227