Gaas And Algaas Reactive Ion Etching In Sicl4/ar Gas Mixtures For Hemt Applications

dc.creatorNunes A.M.
dc.creatorMoshkalev S.A.
dc.creatorTatsch P.J.
dc.creatorDuarte C.A.
dc.creatorGusev G.M.
dc.date2007
dc.date2015-06-30T18:53:10Z
dc.date2015-11-26T14:39:24Z
dc.date2015-06-30T18:53:10Z
dc.date2015-11-26T14:39:24Z
dc.date.accessioned2018-03-28T21:45:02Z
dc.date.available2018-03-28T21:45:02Z
dc.identifier9781566775656
dc.identifierEcs Transactions. , v. 9, n. 1, p. 169 - 177, 2007.
dc.identifier19385862
dc.identifier10.1149/1.2766886
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-45249089206&partnerID=40&md5=43b56aca96feaede9f9eeb1ce8001055
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/105250
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/105250
dc.identifier2-s2.0-45249089206
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1249980
dc.descriptionThis work presents the AlGaAs and GaAs etching results using a RIE reactor and SiCl4/Ar plasma. These materials can be applied in HEMT devices fabrication. The influence of the process temperature on etch rates has been studied. Selectivity of etching and the importance of the periodical process chamber cleaning for SiCl4 containing gas mixtures are discussed. For optimized conditions, GaAs etch rate as high as ∼50nm/min with low surface roughness, for process duration as long as 60 min, have been obtained. © The Electrochemical Society.
dc.description9
dc.description1
dc.description169
dc.description177
dc.descriptionLee, J.W., Jeon, M.H., Cho, G.S., Yim, H.C., Chang, S.K., Kim, K.K., Devre, M., Pearton, S.J., Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors (2002) Solid-State Electronics, 46, pp. 773-775
dc.descriptionLee, J.W., Jeon, M.H., Devre, M., Mackenzie, K.D., Johnson, D., Sasserath, J.N., Pearton, S.J., Shul, R.J., Understanding of etch mechanism and etch depth distibution in inductively coupled plasma etching of GaAs (2001) Solid-State Electronics, 45, pp. 1683-1686
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dc.descriptionGiehl, A.R., Gumbel, M., Kessler, M., Herhammer, N., Hoffmann, G., Fouckhardt, H., Deep dry etching of GaAs and GaSb using Cl2/Ar plasma discharges (2003) J. Vac. Sci. Technol. B, 21 (6), pp. 2393-2397
dc.descriptionDultsev, F.N., Nenasheva, L.A., The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface (2006) Appl. Surf. Sci, 253, pp. 1287-1290
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dc.languageen
dc.publisher
dc.relationECS Transactions
dc.rightsfechado
dc.sourceScopus
dc.titleGaas And Algaas Reactive Ion Etching In Sicl4/ar Gas Mixtures For Hemt Applications
dc.typeActas de congresos


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