Artículos de revistas
Raman Scattering From The Bulk Of Photo-excited Cdte And Inp
Registro en:
Solid State Communications. , v. 47, n. 6, p. 475 - 478, 1983.
381098
10.1016/0038-1098(83)91071-2
2-s2.0-0020806980
Autor
de Castro A.R.B.
Turtelli R.S.
Institución
Resumen
We report measurements of Raman scattering cross-sections by single-particle and collective electronic excitations, as well as by optical phonons in photo-excited CdTe and InP. For the latter our data on electronic light scattering are in excellent quantitative agreement with recent theoretical calculations, while those for Raman scattering by LO phonons correlate very well to our previous data on highly excited GaAs. For CdTe the single particle spectrum is characteristic of a collision time dominated regime and we deduce an electronic life time τ < psec. © 1983. 47 6 475 478 von der Linde, Lambrich, (1979) Phys. Rev. Lett., 42, p. 1090 Leheny, Shah, Fork, Shank, Migus, (1979) Solid State Commun., 31, p. 809 A.C. Algarte and R. Luzzi, Phys. Rev. B (in press)Vasconcellos, Turtelli, de Castro, (1977) Solid State Commun., 22, p. 97 Luzzi, Miranda, (1978) Phys. Lett. C (Physics Reports), 43, p. 423 Turtelli, de Castro, LO Phonon Raman Lineshape in Highly Excited GaAs (1979) Physica Status Solidi (b), 93, p. 811 Bepko, (1975) Phys. Rev., 12 B, p. 669 de Castro, Turtelli, (1979) Solid State Commun, 32, p. 819 Hertel, Appel, (1982) Phys. Rev., 26 B, p. 5730 de Castro, Photon Counting Compression Effects in Pulsed Raman Spectroscopy Using ND:YAG Lasers (1978) Spectroscopy Letters, 11, p. 173 Mooradian, Wright, (1968) Solid State Res. Rep., 1, p. 47. , Lincoln Lab, MIT