dc.creatorAlvarez F.
dc.creatorFragnito H.L.
dc.creatorPrieto P.
dc.creatorChambouleyron I.
dc.date1987
dc.date2015-06-30T13:40:37Z
dc.date2015-11-26T14:37:05Z
dc.date2015-06-30T13:40:37Z
dc.date2015-11-26T14:37:05Z
dc.date.accessioned2018-03-28T21:41:18Z
dc.date.available2018-03-28T21:41:18Z
dc.identifier
dc.identifierJournal Of Non-crystalline Solids. , v. 97-98, n. PART 2, p. 1319 - 1322, 1987.
dc.identifier223093
dc.identifier10.1016/0022-3093(87)90316-4
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-45949117851&partnerID=40&md5=6e1ac3b6f1193e7e5d6e1e024449cc77
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/98166
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/98166
dc.identifier2-s2.0-45949117851
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1249012
dc.descriptionThe emission at room temperature of visible light (near infrared) from reverse biased (forward biased) silicon carbide p-i-n heterostructures is reported. The mechanisms of carrier injection at room and at low temperatures are studied. An exciton-like recombination mechanism explains both, the short recombination time and the improved efficiency observed in samples with higher carbon concentration. © 1987.
dc.description97-98
dc.descriptionPART 2
dc.description1319
dc.description1322
dc.descriptionKruagan, Endo, Guang-Pu, Nomura, Okamoto, Hamakawa, (1985) J. Non-Crust. Solid., 77-78, p. 1429
dc.descriptionTsang, Street, (1979) Phys. Rev. B, 19 (6), p. 3027
dc.descriptionAlvarez, Chambouleyron, (1984) Solar Energy Mat., 10, p. 151. , Due to the lack of data, the mobility value was taken to be the same as in an a-SiNx:H alloy of similar band gap
dc.languageen
dc.publisher
dc.relationJournal of Non-Crystalline Solids
dc.rightsfechado
dc.sourceScopus
dc.titleVisible Light Emission From Reverse Biased Amorphous Silicon Carbide P-i-n Structures
dc.typeArtículos de revistas


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