In this work we establish a simple procedure for determining the orientation of the basal plane of GaSe crystals grown by the vertical Bridgman technique. For this purpose we have used X-ray techniques along with etching and observation of the surface by optical microscopy. As a result we concluded that the direction of growth is always perpendicular to the direction of greatest density <1210> which always coincides with the minor axis of the ellipse formed naturally by cleaving the cylindrical single crystals. © 1977.412275277Cardetta, Mancini, Rizzo, (1972) J. Crystal Growth, 16, p. 183Williams, (1970) Trans. Faraday Soc., 66, p. 113Williams, Thermodynamic excess functions of mixtures of molecules of different sizes (1970) Transactions of the Faraday Society, 66, p. 18