Fabrication And Electrical Properties Of Epitaxial Layers Of Gaas Doped With Manganese† † Work Supported In Part By Telebrás, Cnpq, Fapesp, Bid, Bnde.

dc.creatorGouskov L.
dc.creatorBilac S.
dc.creatorPimentel J.
dc.creatorGouskov A.
dc.date1977
dc.date2015-06-30T12:53:39Z
dc.date2015-11-26T14:34:48Z
dc.date2015-06-30T12:53:39Z
dc.date2015-11-26T14:34:48Z
dc.date.accessioned2018-03-28T21:38:14Z
dc.date.available2018-03-28T21:38:14Z
dc.identifier
dc.identifierSolid State Electronics. , v. 20, n. 8, p. 653 - 656, 1977.
dc.identifier381101
dc.identifier10.1016/0038-1101(77)90039-9
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0017522379&partnerID=40&md5=0de440050d88159f250c91d5cceeff7e
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/97726
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/97726
dc.identifier2-s2.0-0017522379
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1248212
dc.descriptionThe method of fabrication of epitaxial layers of GaAs doped with Mn is described. Resistivity and Hall effect measurements are made on various samples in the temperature range 77-300°K. The experimental results are used to determine the densities Na, Nd of acceptors and compensating donors, the activation energy Ea of the acceptor level associated with Mn and also the mobility of the carriers. These values are calculated using a model involving the two valence bands carriers. The results obtained confirm that the acceptor doping presents a saturation. They are compared to results previously published. A new value, rather close to unity, is obtained for the distribution coefficient of Mn in the case of low doping. © 1977.
dc.description20
dc.description8
dc.description653
dc.description656
dc.descriptionVieland, (1962) J. Appl. Phys., 33, p. 2007
dc.descriptionBlakemore, Brown, Jr., Stass, Woodbury, (1973) J. Appl. Phys., 44, p. 3352
dc.descriptionBrown, Jr., Blakemore, (1972) J. Appl. Phys., 43, p. 2242
dc.descriptionWoodbury, Blakemore, (1973) Phys. Rev. B, 8, p. 3803
dc.descriptionKordos, Jansak, Benc, Preparation and properties of Mn-doped epitaxial gallium arsenide (1975) Solid-State Electronics, 18, p. 223
dc.descriptionDebye, Conwell, (1954) Phys. Rev., 93, p. 693
dc.descriptionSeagen, Pike, Impurity conduction in manganese-doped gallium arsenide (1974) Physical Review B, 10, p. 1760
dc.descriptiond'Olne Campos, Gouskov, Gouskov, Pons, Residual acceptors in natural GaSb and Gaxln1−xSb
dc.descriptiontheir contribution to transport between 4.7 and 300 °K (1973) Journal of Applied Physics, 44, p. 2642
dc.descriptionMadelung, (1964) Physics of III–V Compounds, , Wiley, New York
dc.descriptionEhrenreich, (1960) Phys. Rev., 120, p. 1951
dc.languageen
dc.publisher
dc.relationSolid State Electronics
dc.rightsfechado
dc.sourceScopus
dc.titleFabrication And Electrical Properties Of Epitaxial Layers Of Gaas Doped With Manganese† † Work Supported In Part By Telebrás, Cnpq, Fapesp, Bid, Bnde.
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución