dc.creatorNucho R.N.
dc.creatorRamos J.G.
dc.creatorWolff P.A.
dc.date1978
dc.date2015-06-30T12:53:12Z
dc.date2015-11-26T14:34:41Z
dc.date2015-06-30T12:53:12Z
dc.date2015-11-26T14:34:41Z
dc.date.accessioned2018-03-28T21:38:07Z
dc.date.available2018-03-28T21:38:07Z
dc.identifier
dc.identifierPhysical Review B. , v. 17, n. 4, p. 1843 - 1858, 1978.
dc.identifier1631829
dc.identifier10.1103/PhysRevB.17.1843
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-5844322437&partnerID=40&md5=7cd9eb6ffdd6da096092489fc7e26143
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/97657
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/97657
dc.identifier2-s2.0-5844322437
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1248175
dc.descriptionA simple model-independent method is developed to relate chemical bonds to the dielectric constant and other physical properties of tetrahedral semiconductors with the minimum number of parameters possible. For this purpose, we express 1(0), via the Kramers-Kronig relation, as a function of the zeroth and the first moments of 2(). The first moment is determined by the f sum rule while the zeroth moment can be calculated if the valence- and conduction-band wave functions are known. Since conduction bands are inadequately described by models that are analytically simple, we bypass the problem by using completeness to eliminate the conduction band entirely. The result is an expression for 1(0) which involves only valenceband wave functions. Since working in a localized representation is more convenient than in the Bloch representation, we introduce a generalized Wannier function of bonding character for the valence bands. Realizing that this is appropriate for only those semiconductors like diamond in which the bonding-antibonding coupling is weak, we build into our Wannier function the lacking antibonding character via a power-series expansion in the quantity V1V2 (Hall-Weaire parameters). Using Herman-Skillman values for the atomic orbitals, we obtain numerical results that agree with experiment to about 10%. © 1978 The American Physical Society.
dc.description17
dc.description4
dc.description1843
dc.description1858
dc.languageen
dc.publisher
dc.relationPhysical Review B
dc.rightsaberto
dc.sourceScopus
dc.titleChemical-bond Approach To The Electric Susceptibility Of Semiconductors
dc.typeArtículos de revistas


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