We have measured the near band edge photoluminescence of Mn doped liquid phase epitaxially grown GaAs. The photoluminescence spectra at 2°K shows, at low excitation intensities, a structure of up to eight sharp peaks (widths .2 to 1.0 meV) between 1.517 and 1.512 eV, besides the lower energy bands near 1.41 eV due to the deep Mn acceptor level and the usual donor-acceptor bands around 1.47 eV. Attempts to relate the sharp lines to the Mn electronic states, introduced by doping, were unsuccessful. It is our belief that the presence of this particular impurity in our samples allows for whatever states are responsible for the sharp line structure, to reveal themselves in the emission spectrum. A most unespected result is that near band edge sharp line luminescence is observed for impurity concentration as high as 1018cm-3. © 1978.2510755758Leite, Di Giovanni, (1967) Phys. Rev., 153, p. 841Shah, Leite, Nahory, (1969) Phys. Rev., 184, p. 811Gileo, Baylei, Hill, Free-Carrier and Exciton Recombination Radiation in GaAs (1968) Physical Review, 174, p. 898(1971) Phys. Rev. B, 3, p. 3581Bogardus, Bebb, (1968) Phys. Rev., 176, p. 993Sell, Stokowski, Dingle, Dilorenzo, (1973) Phys. Rev. B, 7, p. 4568White, Dean, Taylor, Clarke, Ashen, Mullin, (1972) J. Phys., 5, p. 1727Rossi, Wolff, Stilman, Dimmock, (1970) Solid State Comm., 8, p. 2021Ulbrich, Moreth, (1974) Solid State Comm., 14, p. 331Bimberg, Sondergeld, Grobe, (1971) Phys. Rev. B, 4, p. 3451Heim, Hiesinger, (1974) Phys. Status Solid B, 66, p. 461Wolff, Stillman, (1970) Proc. 1970 Symp. on GaAs, p. 3Bimberg, Chairer, Sondergelo, Yep, (1970) J. Luminescence, 3, p. 175Gouskov, Bilac, Pimentel, Gouskov, (1977) Solid State Elctr., 20, p. 653Leite, Ripper, Guglielmi, (1964) Appl. Phys. Letters, 5, p. 188Lee, Anderson, (1964) Solid State Comm., 2, p. 265Williams, (1967) Brit. J. Appl. Phys., 18, p. 253Schairer, Schmidt, (1974) Phys. Rev. B, 10, p. 2501Lin, Gamo, Masuda, Photoluminescence and Electrical Measurements on Manganese Ion-Implanted GaAs (1976) Japanese Journal of Applied Physics, 15, p. 33Ilegems, Dingle, Rupp, (1975) J. Appl. Phys., 46, p. 3059Sharma, Rodrigues, (1967) Phys. Rev., 153, p. 823Exciton-Donor Complexes in Semiconductors (1967) Physical Review, 159, p. 649Munschy, Énergie de liaison du système composé d'un exciton et d'un électron piégés par un centre d'impureté dans un semi-conducteur (1967) Journal de Physique, 28, p. 307Hopfield, (1965) Proceedings of the Seventh International Conference on Physics of Semiconductor, , Paris 1964, Academic Press. Inc, N.YSuffczynski, Gorzkowski, Kowalczyk, (1967) Phys. Letters, 24 A, p. 453