| dc.creator | De Orio R.L. | |
| dc.creator | Swart J.W. | |
| dc.creator | Marzano W. | |
| dc.date | 2006 | |
| dc.date | 2015-06-30T18:19:54Z | |
| dc.date | 2015-11-26T14:29:44Z | |
| dc.date | 2015-06-30T18:19:54Z | |
| dc.date | 2015-11-26T14:29:44Z | |
| dc.date.accessioned | 2018-03-28T21:33:01Z | |
| dc.date.available | 2018-03-28T21:33:01Z | |
| dc.identifier | 1566775124; 9781566775120 | |
| dc.identifier | Ecs Transactions. , v. 4, n. 1, p. 319 - 326, 2006. | |
| dc.identifier | 19385862 | |
| dc.identifier | | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-33847646193&partnerID=40&md5=a3a6040c10c393a6d44a7ac2d671fff0 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/103961 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/103961 | |
| dc.identifier | 2-s2.0-33847646193 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1246926 | |
| dc.description | This paper describes the design of a thyristor surge protective device (TSPD) for telecommunication equipments based on electrical simulations carried out with ATLAS from SILVACO. The influence of the device doping and geometry on the breakover voltage, switching and holding current and on the on-state voltage drop has been analyzed. It has been shown that the TSPD voltage capability is dependent on the breakdown voltage of the p-n (substrate) junction. Also, it has been observed that p-region doping concentration and emitter geometry have both a great impact on the on-state device operation. A TSPD with breakover voltage of 297 V, holding current of 38.5 mA and on-state voltage drop of 6.7 V at a current of 1A has been demonstrated. © 2006 The Electrochemical Society. | |
| dc.description | 4 | |
| dc.description | 1 | |
| dc.description | 319 | |
| dc.description | 326 | |
| dc.description | Flores, D., Jordà, X., Hidalgo, S., Fernández, J., Rebollo, J., Millán, J., Sierra, I., Mazarredo, I., (1999) IEEE Trans. on Electromagnetic Compatibility, 41 (1), pp. 30-38. , February | |
| dc.description | IEEE C62.37-1-2000, IEEE Guide for the Application of Thyristor Surge Protective DevicesBlicher, A., (1976) Thyristor Physics, , Springer, Verlag, New York | |
| dc.description | Sze, S.M., (1981) Physics of Semiconductor Devices, pp. 190-234. , second edition, John Wiley & Sons, pp | |
| dc.description | Sheng, W.W., (1975) IEEE Trans. on Electron Devices, pp. 25-27. , January | |
| dc.description | Chu, C.K., (1970) IEEE Trans. on Electron Devices, ED - 17 (9), pp. 687-690. , September | |
| dc.description | Dodson, W.H., Longini, R.L., (1966) IEEE Trans. on Electron Devices, ED - 13 (7), pp. 598-604. , July | |
| dc.description | Cornu, J., Lietz, M., (1972) IEEE Trans. on Electron Devices, ED - 19 (8), pp. 975-981. , August | |
| dc.description | GR-974-CORE, Generic Requirements for Telecommunications Line Protector Units TLPUs, Issue 3, June 2002 | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | ECS Transactions | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | Design And Simulation Of A Thyristor Surge Protective Device For Telecommunication Systems | |
| dc.type | Actas de congresos | |
