Electrical Properties Of Individual And Small Ensembles Of Inas/inp Nanostructures

dc.creatorVicaro K.O.
dc.creatorGutierrez H.R.
dc.creatorBortoleto J.R.R.
dc.creatorNieto L.
dc.creatorVon Zuben A.A.G.
dc.creatorSeabra A.C.
dc.creatorSchulz P.A.
dc.creatorCotta M.A.
dc.date2006
dc.date2015-06-30T18:19:43Z
dc.date2015-11-26T14:29:39Z
dc.date2015-06-30T18:19:43Z
dc.date2015-11-26T14:29:39Z
dc.date.accessioned2018-03-28T21:32:55Z
dc.date.available2018-03-28T21:32:55Z
dc.identifier
dc.identifierPhysica Status Solidi (a) Applications And Materials Science. , v. 203, n. 6, p. 1353 - 1358, 2006.
dc.identifier18626300
dc.identifier10.1002/pssa.200566109
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-33646763887&partnerID=40&md5=107a446e2f7753cee9c9046a832a2d44
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/103954
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/103954
dc.identifier2-s2.0-33646763887
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1246901
dc.descriptionWe investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
dc.description203
dc.description6
dc.description1353
dc.description1358
dc.descriptionTanaka, I., Kamiya, I., Sakaki, H., Qureshi, N., Allen Jr., S.J., Petroff, P.M., (1999) Appl. Phys. Lett., 74, p. 844
dc.descriptionTanaka, I., Kamiya, I., Sakaki, H., (1999) J. Cryst. Growth, 201-202, p. 1194
dc.descriptionVicaro, K.O., Cotta, M.A., Gutiérrez, H.R., Bortoleto, J.R.R., (2003) Nanotechnology, 14, p. 509
dc.descriptionHouzé, F., Meyer, R., Schneegans, O., Boyer, L., (1996) Appl. Phys. Lett., 69 (13), p. 1975
dc.descriptionBuehler, T.M., Reilly, D.J., Starrett, R.P., Chan, V.C., Hamilton, A.R., Dzurak, A.S., Clark, R.G., (2004) J. Appl. Phys., 96 (11), p. 6827. , and references therein
dc.descriptionGutiérrez, H.R., Cotta, M.A., Bortoleto, J.R.R., De Carvalho, M.M.G., (2002) J. Appl. Phys., 92, p. 7523
dc.descriptionGutiérrez, H.R., Cotta, M.A., De Carvalho, M.M.G., (2001) Appl. Phys. Lett., 79, p. 3854
dc.descriptionGutiérrez, H.R., Magalhães-Paniago, R., Bortoleto, J.R.R., Nieto, L., Cotta, M.A., (2005), submitted for publicationKirton, M.J., Uren, M.J., (1989) Adv. Phys., 38 (4), pp. 367-468
dc.descriptionÉfros, A.L., Shklovskii, B.I., (1975) J. Phys. C, Solid State Phys., 8 (4), pp. L49
dc.descriptionDunford, J.L., Suganuma, Y., Dhirani, A.-A., Statt, B., (2005) Phys. Rev. B, 72, p. 075441
dc.languageen
dc.publisher
dc.relationPhysica Status Solidi (A) Applications and Materials Science
dc.rightsfechado
dc.sourceScopus
dc.titleElectrical Properties Of Individual And Small Ensembles Of Inas/inp Nanostructures
dc.typeActas de congresos


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