Cyclotron Effective Mass And Land́ G Factor In Gaas- Ga1-x Alx As Quantum Wells Under Growth-direction Applied Magnetic Fields

dc.creatorDe Dios-Leyva M.
dc.creatorPorras-Montenegro N.
dc.creatorBrandi H.S.
dc.creatorOliveira L.E.
dc.date2006
dc.date2015-06-30T18:17:54Z
dc.date2015-11-26T14:29:15Z
dc.date2015-06-30T18:17:54Z
dc.date2015-11-26T14:29:15Z
dc.date.accessioned2018-03-28T21:32:28Z
dc.date.available2018-03-28T21:32:28Z
dc.identifier
dc.identifierJournal Of Applied Physics. , v. 99, n. 10, p. - , 2006.
dc.identifier218979
dc.identifier10.1063/1.2195885
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-33744792083&partnerID=40&md5=5ab0b7ec9a5fc5fdc6e81a127125bbb6
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/103869
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/103869
dc.identifier2-s2.0-33744792083
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1246791
dc.descriptionWe have performed a theoretical study of the cyclotron effective mass and electron effective Land́ g∥ factor in semiconductor GaAs- Ga1-x Alx As quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. The theoretical approach is within the nonparabolic and effective-mass approximation and via an Ogg-McCombe effective Hamiltonian [Proc. Phys. Soc. London 89, 431 (1969); Phys. Rev. 181, 1206 (1969)] for the electron in the conduction band of the GaAs- Ga1-x Alx As heterostructure, which allows a unified treatment of both the cyclotron mass and g∥ factor. Calculations are performed for different widths of the GaAs- Ga1-x Alx As quantum wells and as functions of the applied magnetic field, with results in very good agreement with reported experimental measurements of the electron cyclotron effective mass and g∥ factor. © 2006 American Institute of Physics.
dc.description99
dc.description10
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dc.languageen
dc.publisher
dc.relationJournal of Applied Physics
dc.rightsaberto
dc.sourceScopus
dc.titleCyclotron Effective Mass And Land́ G Factor In Gaas- Ga1-x Alx As Quantum Wells Under Growth-direction Applied Magnetic Fields
dc.typeArtículos de revistas


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