dc.creator | Marques M. | |
dc.creator | Teles L.K. | |
dc.creator | Ferreira L.G. | |
dc.creator | Scolfaro L.M.R. | |
dc.creator | Furthmuller J. | |
dc.creator | Bechstedt F. | |
dc.date | 2006 | |
dc.date | 2015-06-30T18:15:19Z | |
dc.date | 2015-11-26T14:28:22Z | |
dc.date | 2015-06-30T18:15:19Z | |
dc.date | 2015-11-26T14:28:22Z | |
dc.date.accessioned | 2018-03-28T21:31:34Z | |
dc.date.available | 2018-03-28T21:31:34Z | |
dc.identifier | | |
dc.identifier | Physical Review B - Condensed Matter And Materials Physics. , v. 73, n. 23, p. - , 2006. | |
dc.identifier | 10980121 | |
dc.identifier | 10.1103/PhysRevB.73.235205 | |
dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-33745063597&partnerID=40&md5=ba1c5454c938ed1aa7ac4f3823c58349 | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/103694 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/103694 | |
dc.identifier | 2-s2.0-33745063597 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1246577 | |
dc.description | We extend the generalized quasichemical approach (GQCA) to describe the Ax By C1-x-y D quaternary alloys in the zinc-blende structure. Combining this model with ab initio ultrasoft pseudopotential calculations within density functional theory, the structural and electronic properties of Alx Gay In1-x-y X (X=As, P, or N) quaternary alloys are obtained, taking into account the disorder and composition effects. Results for the bond lengths show that the variation with the compositions is approximately linear and also does not deviate very much from the value of the corresponding binary compounds. The maximum variation observed amounts to 3.6% for the In-N bond length. For the variation of band gap, we obtain a bowing parameter b=0.26 eV for the (Ga0.47 In0.53 As)z (Al0.48 In0.52 As)1-z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, we compare our results for the band gap to data for the wurtzite phase. We also obtained a good agreement despite all evidences for cluster formation in this alloy. Finally, a bowing parameter of 0.22 eV is obtained for zinc-blende AlGaInN lattice matched with GaN. © 2006 The American Physical Society. | |
dc.description | 73 | |
dc.description | 23 | |
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dc.description | | |
dc.description | Li, J., Nam, K.B., Kim, K.H., Lin, J.Y., Jiang, H.X., (2001) Appl. Phys. Lett., 78, p. 61. , APPLAB 0003-6951 10.1063/1.1331087 | |
dc.description | Adivarahan, V., Chitnis, A., Zhang, J.P., Shatalov, M., Yang, J.W., Simin, G., Asif Khan, M., Shur, M.S., (2001) Appl. Phys. Lett., 79, p. 4240. , APPLAB 0003-6951 10.1063/1.1425453 | |
dc.description | Yasan, A., McClintock, R., Mayes, K., Darvish, S.R., Kung, P., Razegui, M., (2002) Appl. Phys. Lett., 81, p. 801. , APPLAB 0003-6951 10.1063/1.1497709 | |
dc.description | Nagahama, S., Yanamoto, T., Sano, M., Mukai, T., (2001) Jpn. J. Appl. Phys., Part 1, 40, p. 788. , JAPNDE 0021-4922 10.1143/JJAP.40.L788 | |
dc.description | Fujii, T., Nakata, Y., Sigiyama, Y., Hiyiamizu, S., (1986) Jpn. J. Appl. Phys., 25, p. 254. , JAPLD8 0021-4922 | |
dc.description | Olego, D., Chang, T.Y., Silberg, E., Caridi, E.A., Pinczuk, A., (1982) Appl. Phys. Lett., 41, p. 476. , APPLAB 0003-6951 10.1063/1.93537 | |
dc.description | Hirayama, H., Kinoshita, A., Yamabi, T., Enomoto, Y., Hirata, A., Araki, T., Nanishi, Y., Aoyagi, Y., (2002) Appl. Phys. Lett., 80, p. 207. , APPLAB 0003-6951 10.1063/1.1433162 | |
dc.description | Takayama, T., Yuri, M., Itoh, K., Baba, T., Harris Jr., J.S., (2001) J. Cryst. Growth, 222, p. 29. , JCRGAE 0022-0248 10.1016/S0022-0248(00)00869-1 | |
dc.description | Koukitu, A., Kumegai, Y., Seki, H., (2000) J. Cryst. Growth, 221, p. 743. , JCRGAE 0022-0248 | |
dc.description | Feng, S.-W., Cheng, Y.-C., Chung, Y.-Y., Yang, C.C., Ma, K.-J., Yan, C.-C., Hsu, C., Jiang, H.X., (2003) Appl. Phys. Lett., 82, p. 1377. , APPLAB 0003-6951 10.1063/1.1556965 | |
dc.description | Chen, C.H., Chen, Y.F., Lan, Z.H., Chen, L.C., Chen, K.H., Jiang, H.X., Lin, J.Y., (2004) Appl. Phys. Lett., 84, p. 1480. , APPLAB 0003-6951 10.1063/1.1650549 | |
dc.description | Marques, M., Teles, L.K., Scolfaro, L.M.R., Ferreira, L.G., Leite, J.R., (2004) Phys. Rev. B, 70, p. 073202. , PRBMDO 0163-1829 10.1103/PhysRevB.70.073202 | |
dc.description | Marques, M., Ferreira, L.G., Teles, L.K., Scolfaro, L.M.R., (2005) Phys. Rev. B, 71, p. 205204. , PRBMDO 0163-1829 10.1103/PhysRevB.71.205204 | |
dc.description | Teles, L.K., Furthmüller, J., Scolfaro, L.M.R., Leite, J.R., Bechstedt, F., (2000) Phys. Rev. B, 62, p. 2475. , PRBMDO. 0163-1829. 10.1103/PhysRevB.62.2475 | |
dc.description | Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Furthmüller, J., Bechstedt, F., (2002) J. Appl. Phys., 92, p. 7109. , JAPIAU. 0021-8979. 10.1063/1.1518136 | |
dc.description | Teles, L.K., Furthmüller, J., Scolfaro, L.M.R., Leite, J.R., Bechstedt, F., (2001) Phys. Rev. B, 63, p. 085204. , PRBMDO. 0163-1829. 10.1103/PhysRevB.63.085204 | |
dc.description | Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Furthmüller, J., Bechstedt, F., (2002) Appl. Phys. Lett., 80, p. 1177. , APPLAB. 0003-6951. 10.1063/1.1450261 | |
dc.description | Tabata, A., Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Kharchenko, A., Frey, T., As, D.J., Bechstedt, F., (2002) Appl. Phys. Lett., 80, p. 769. , APPLAB. 0003-6951. 10.1063/1.1436270 | |
dc.description | Connolly, J.W.D., Williams, A.R., (1983) Phys. Rev. B, 27, p. 5169. , PRBMDO 0163-1829 10.1103/PhysRevB.27.5169 | |
dc.description | Chen, A.-B., Sher, A., (1995) Semiconductor Alloys, , Plenum Press, New York | |
dc.description | Kresse, G., Furthmüller, J., (1996) Comput. Mater. Sci., 6, p. 15. , CMMSEM. 0927-0256. 10.1016/0927-0256(96)00008-0 | |
dc.description | Kresse, G., Furthmüller, J., (1996) Phys. Rev. B, 54, p. 11169. , PRBMDO. 0163-1829. 10.1103/PhysRevB.54.11169 | |
dc.description | Hohenberg, P., Kohn, W., (1964) Phys. Rev., 136, p. 864. , PRVBAK 0096-8269 10.1103/PhysRev.136.B864 | |
dc.description | Kohn, W., Sham, L.J., (1965) Phys. Rev., 140, p. 1133. , PRVAAH 0096-8250 10.1103/PhysRev.140.A1133 | |
dc.description | Vanderbilt, D., (1990) Phys. Rev. B, 41, p. 7892. , PRBMDO 0163-1829 10.1103/PhysRevB.41.7892 | |
dc.description | Perdew, J.P., Zunger, A., (1981) Phys. Rev. B, 23, p. 5048. , PRBMDO 0163-1829 10.1103/PhysRevB.23.5048 | |
dc.description | Monkhorst, H.J., Pack, J.D., (1976) Phys. Rev. B, 13, p. 5188. , PLRBAQ 0556-2805 10.1103/PhysRevB.13.5188 | |
dc.description | Marques, M., Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Furthmüller, J., Bechstedt, F., (2003) Appl. Phys. Lett., 83, p. 890. , APPLAB. 0003-6951. 10.1063/1.1597986 | |
dc.description | Jeffs, N.J., Blant, A.V., Cheng, T.S., Foxon, C.T., Bailey, C., Harrison, P.G., Mosselmans, J.F.W., Dent, A.J., (1998) Mater. Res. Soc. Symp. Proc., 512, p. 519. , MRSPDH 0272-9172 | |
dc.description | Miyano, K.E., Woicik, J.C., Robins, L.H., Bouldin, C.E., Wickenden, D.K., (1997) Appl. Phys. Lett., 70, p. 2108. , APPLAB 0003-6951 10.1063/1.118963 | |
dc.description | Saito, T., Arakawa, Y., (1999) Phys. Rev. B, 60, p. 1701. , PRBMDO 0163-1829 10.1103/PhysRevB.60.1701 | |
dc.description | Sze, S.M., (1981) Physics of Semiconductor Devices, , Wiley, New York | |
dc.description | Chen, S.-G., Fan, X.-Q., (1997) J. Phys.: Condens. Matter, 9, p. 3151. , JCOMEL 0953-8984 10.1088/0953-8984/9/15/008 | |
dc.description | Sökeland, F., Rohlfing, M., Krüger, P., Pollmann, J., (2003) Phys. Rev. B, 68, p. 075203. , PRBMDO. 0163-1829. 10.1103/PhysRevB.68.075203 | |
dc.description | Schörmann, J., Potthast, S., Schnietz, M., Li, S.F., As, D.J., Lischka, K., Phys. Status Solidi C, , ZZZZZZ. 1610-1634 (to be published) | |
dc.description | Yu. Davydov, V., Klochikhin, A.A., Seisyan, R.P., Emtsev, V.V., Ivanov, S.V., Bechstedt, F., Furthmüller, J., Graul, J., (2002) Phys. Status Solidi B, 229, p. 1. , PSSBBD. 0370-1972. 10.1002/1521-3951(200202)229:3<R1::AID- PSSB99991>3.0.CO;2-O | |
dc.description | Yu. Davydov, V., Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Haller, E.E., (2002) Phys. Status Solidi B, 234, p. 787. , PSSBBD. 0370-1972. 10.1002/1521-3951(200212)234:3<787::AID- PSSB787>3.0.CO;2-H | |
dc.description | Bechstedt, F., Furthmüller, J., Ferhat, M., Teles, L.K., Scolfaro, L.M.R., Leite, J.R., Yu. Davydov, V., Goldhahn, R., (2003) Phys. Status Solidi a, 195, p. 628. , PSSABA. 0031-8965. 10.1002/pssa.200306164 | |
dc.description | (1998) Gallium Nitride (GaN) I and II, Semiconductors and Semimetals, 50. , edited by J. I. Pankove and T. D. Moustakas, Vol. Academic Press, New York | |
dc.description | (1999), 57. , ibid. Vol. Academic Press, New YorkNadja, S.P., Kean, A.H., Dawson, M.D., Duggan, G., (1995) J. Appl. Phys., 77, p. 3412. , JAPIAU 0021-8979 10.1063/1.358631 | |
dc.description | McIntosh, F.G., Boutros, K.S., Roberts, J.C., Bedair, S.M., Piner, E.L., El-Masry, N.A., (1996) Appl. Phys. Lett., 68, p. 40. , APPLAB 0003-6951 10.1063/1.116749 | |
dc.description | Ryu, M.-Y., Chen, C.Q., Kuokstis, E., Yang, J.W., Simin, G., Khan, M.A., W. Yu, S.P., (2002) Appl. Phys. Lett., 80, p. 3943. , APPLAB 0003-6951 10.1063/1.1482415 | |
dc.description | Yamaguchi, S., Kariya, M., Nitta, S., Kato, H., Takeuchi, T., Wetzel, C., Amano, H., Akasaki, I., (1998) J. Cryst. Growth, 195, p. 309. , JCRGAE 0022-0248 10.1016/S0022-0248(98)00629-0 | |
dc.description | Davies, J.I., Marshall, A.C., Scott, M.D., Griffiths, R.J.M., (1988) Appl. Phys. Lett., 53, p. 276. , APPLAB 0003-6951 10.1063/1.100593 | |
dc.description | Kopf, R.F., Wei, H.P., Perley, A.P., Livescu, G., (1992) Appl. Phys. Lett., 60, p. 2386. , APPLAB 0003-6951 10.1063/1.107005 | |
dc.description | Cury, L.A., Beerens, J., Praseuth, J.P., (1993) Appl. Phys. Lett., 63, p. 1804. , APPLAB 0003-6951 10.1063/1.110668 | |
dc.description | Böhrer, J., Krost, A., Bimberg, D.B., (1993) Appl. Phys. Lett., 63, p. 1918. , APPLAB. 0003-6951. 10.1063/1.110648 | |
dc.description | Fan, J.C., Chen, Y.F., (1996) J. Appl. Phys., 80, p. 1239. , JAPIAU 0021-8979 10.1063/1.362862 | |
dc.description | Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R., (2001) J. Appl. Phys., 89, p. 5815. , JAPIAU 0021-8979 10.1063/1.1368156 | |
dc.description | Han, J., Figiel, J.J., Petersen, G.A., Myers, S.M., Crawford, M.H., Banas, M.A., (2000) Jpn. J. Appl. Phys., Part 1, 39, p. 2372. , JAPNDE 0021-4922 10.1143/JJAP.39.2372 | |
dc.description | Aumer, M.E., Leboeuf, S.F., McIntosh, F.G., Bedair, S.M., (1999) Appl. Phys. Lett., 75, p. 3315. , APPLAB 0003-6951 10.1063/1.125336 | |
dc.language | en | |
dc.publisher | | |
dc.relation | Physical Review B - Condensed Matter and Materials Physics | |
dc.rights | aberto | |
dc.source | Scopus | |
dc.title | Statistical Model Applied To Ax By C1-x-y D Quaternary Alloys: Bond Lengths And Energy Gaps Of Alx Gay In1-x-y X (x=as, P, Or N) Systems | |
dc.type | Artículos de revistas | |