Sno 2 Extended Gate Field-effect Transistor As Ph Sensor

dc.creatorBatista P.D.
dc.creatorMulato M.
dc.creatorGraeff C.F.D.O.
dc.creatorFernandez F.J.R.
dc.creatorMarques F.D.C.
dc.date2006
dc.date2015-06-30T18:10:47Z
dc.date2015-11-26T14:26:50Z
dc.date2015-06-30T18:10:47Z
dc.date2015-11-26T14:26:50Z
dc.date.accessioned2018-03-28T21:29:54Z
dc.date.available2018-03-28T21:29:54Z
dc.identifier
dc.identifierBrazilian Journal Of Physics. , v. 36, n. 02:00:00, p. 478 - 481, 2006.
dc.identifier1039733
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-33746061696&partnerID=40&md5=8cda6341058c383c85309c66ff4f9817
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/103388
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/103388
dc.identifier2-s2.0-33746061696
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1246173
dc.descriptionExtended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrode and a MOSFET device, which can be applied to the measurement of ion content in a solution. This structure has a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, we constructed an EGFET by connecting the sensing structure fabricated with SnO 2 to a commercial MOSFET (CD4007UB). From the numerical simulation of site binding model it is possible to determine some of the desirable characteristics of the films. We investigate and compare SnO 2 films prepared using both the Sol-gel and the Pechini methods. The aim is an amorphous material for the EGFET. The SnO 2 powder was obtained at different calcinating temperatures (200 - 500°C) and they were investigated by X-ray diffraction (XRD), infrared spectroscopy (IR), thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The films were investigated as pH sensors (range 2-11).
dc.description36
dc.description02:00:00
dc.description478
dc.description481
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dc.languageen
dc.publisher
dc.relationBrazilian Journal of Physics
dc.rightsfechado
dc.sourceScopus
dc.titleSno 2 Extended Gate Field-effect Transistor As Ph Sensor
dc.typeActas de congresos


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