dc.creatorFrota-Pessoa S.
dc.creatorLuzzi R.
dc.date1976
dc.date2015-06-26T17:51:05Z
dc.date2015-11-26T14:23:32Z
dc.date2015-06-26T17:51:05Z
dc.date2015-11-26T14:23:32Z
dc.date.accessioned2018-03-28T21:25:33Z
dc.date.available2018-03-28T21:25:33Z
dc.identifier
dc.identifierPhysical Review B. , v. 13, n. 12, p. 5420 - 5428, 1976.
dc.identifier1631829
dc.identifier10.1103/PhysRevB.13.5420
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0040409478&partnerID=40&md5=5ea0914ceba6d39a9a604f873b66186c
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/96566
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/96566
dc.identifier2-s2.0-0040409478
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1245142
dc.descriptionResonant Raman scattering from LO phonons in the presence of a constant magnetic field is considered. We calculate the differential extinction coefficient, including effects of the electron-phonon interaction, for a doped semiconductor. It is shown that significant deviations from the Lorentzian line shape may appear due to hybridization of the phonon mode with the cyclotron modes, when for certain geometries, a harmonic of the cyclotron frequency is approximately equal to the LO-phonon frequency. An application is made for GaAs. © 1976 The American Physical Society.
dc.description13
dc.description12
dc.description5420
dc.description5428
dc.languageen
dc.publisher
dc.relationPhysical Review B
dc.rightsaberto
dc.sourceScopus
dc.titleResonant Raman Scattering By Lo Phonons In The Presence Of A Static Magnetic Field
dc.typeArtículos de revistas


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