| dc.creator | Ripper J.E. | |
| dc.date | 1972 | |
| dc.date | 2015-06-26T17:50:50Z | |
| dc.date | 2015-11-26T14:23:22Z | |
| dc.date | 2015-06-26T17:50:50Z | |
| dc.date | 2015-11-26T14:23:22Z | |
| dc.date.accessioned | 2018-03-28T21:25:21Z | |
| dc.date.available | 2018-03-28T21:25:21Z | |
| dc.identifier | | |
| dc.identifier | Journal Of Applied Physics. , v. 43, n. 4, p. 1762 - 1763, 1972. | |
| dc.identifier | 218979 | |
| dc.identifier | 10.1063/1.1661391 | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-0015326341&partnerID=40&md5=323e77d7bdbf81e90514824a59488924 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/96520 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/96520 | |
| dc.identifier | 2-s2.0-0015326341 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1245089 | |
| dc.description | An analysis of the delay between the beginning of the excitation of a semiconductor laser and the onset of stimulated emission is carried out. It justifies the use of these delays as a method of measuring the spontaneous carrier lifetime, even when this lifetime is not the same for all carriers. It is also shown that the lifetime thus measured is the average lifetime of all carriers when the population inversion is at the threshold level. © 1972 The American Institute of Physics. | |
| dc.description | 43 | |
| dc.description | 4 | |
| dc.description | 1762 | |
| dc.description | 1763 | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | Journal of Applied Physics | |
| dc.rights | aberto | |
| dc.source | Scopus | |
| dc.title | Measurement Of Spontaneous Carrier Lifetime From Stimulated Emission Delays In Semiconductor Lasers | |
| dc.type | Artículos de revistas | |
