Artículos de revistas
Dynamics Of The Hydrogen Oxidation And Silicon Dissolution Reactions In The Formation Of Porous Silicon
Registro en:
Langmuir. , v. 12, n. 12, p. X - 2877, 1996.
7437463
2-s2.0-5244286128
Autor
Soares D.M.
Teschke O.
Dos Santos M.C.
Institución
Resumen
Porous silicon layers were grown in hydrofluoric acid solutions under constant anodic currents periodically interrupted during 100 ms every second. By monitoring the time dependent electrode potential, dynamic characteristics of the porous silicon formation were determined. Two reactions occur during the process: at the bottom of the pores the anodic silicon dissolution reaction proceeds and on the walls of the pores the hydrogen oxidation reaction takes place. 12 12 X 2877 Canham, L.T., (1990) Appl. Phys. Lett., 57, p. 1046 Smith, R.L., Collins, S.D., (1992) J. Appl. Phys., 71, pp. R1 Lehmann, V., Gösele, U., (1991) Appl. Phys. Lett., 58, p. 856 Beale, M.I.J., Benjamin, I.D., Uren, M.J., Chew, N.G., Cullis, A.G., (1985) Appl. Phys. Lett., 46, p. 86 Smith, R.L., Chuang, S.F., Collins, S.D., (1988) J. Electron. Mater., 17, p. 533 Teschke, O., Santos, M.C., Kleinke, M.U., Soares, D.M., Galvão, D.S., (1995) J. Appl. Phys., 78, p. 590 Teschke, O., Galembeck, F., Goncalves, M.C., Davanzo, C.U., (1994) Appl. Phys. Lett., 64, p. 26 Trucks, G.W., Raghavachari, K., Higashi, G.S., Chabal, Y.J., (1990) Phys. Rev. Lett., 65, p. 504 Judge, J.S., (1971) J. Electrochem. Soc., 118, p. 1772 Memming, R., Schwandt, G., (1966) Surf. Sci., 4, p. 109 Theunissen, M.J.J., (1972) J. Electrochem. Soc., 119, p. 351 Chazalviel, J.N., (1979) Surf. Sci., 88, p. 204 Gerischer, H., (1990) Electrochim. Acta, 35, p. 1677 Memming, R., Schwandt, G., (1966) Surf. Sci., 5, p. 97 Meissner, D., Memming, R., (1992) Electrochim. Acta, 37, p. 799 Chazalviel, J.N., (1992) Electrochim. Acta, 37, p. 865