Artículos de revistas
Characterization Of Pbte Epitaxial Layers Grown On Baf2/caf2/si Structures
Registro en:
Brazilian Journal Of Physics. , v. 26, n. 1, p. 406 - 409, 1996.
1039733
2-s2.0-0030560335
Autor
Boschetti C.
Abramof E.
Rappl P.H.O.
Bandeira I.N.
Motisuke P.
Hayashi M.A.
Cardoso L.P.
Institución
Resumen
In this paper we present a characterization of PbTe epilayers grown by hot wall epitaxy on silicon using II-a fluorides as intermediate layers. The PbTe layers were characterized electrically by temperature dependent Hall effect measurements. A detailed study of the strain in CaF2 layers grown on Si(111) substrates was performed by high resolution x-ray diffraction analysis. To simulate the real operation conditions of the lead chalcogenides infrared devices, the CaF2/Si structure was submitted to thermal cycles from 300 to 77K and a ω scan was measured after each cycle. 26 1 406 409 Zogg, H., Blunier, S., Masek, J., (1989) J. Electrochem. Soc., 136, p. 775 Zogg, H., Hppi, M., (1985) Appl. Phys. Lett., 47, p. 133 Boschetti, C., Rappl, P.H.O., Ueta, A.Y., Bandeira, I.N., (1993) Infrared Phys., 34, p. 281 Asano, T., Ishiwara, H., Kaifu, N., (1983) Japan. J. Appl. Phys., 22, p. 1474 Schowalter, L.J., Fathauer, R.W., Goehner, R.P., Turner, L.G., DeBlois, R.W., Hashimoto, S., Peng, J.-L., Krusius, J.P., (1985) J. Appl. Phys., 58, p. 302 Hashimoto, S., Peng, J.-L., Gibson, W.M., Showalter, L.J., Fathauer, R.W., (1985) Appl. Phys. Lett., 47, p. 1071 Tempel, A., Mader, M., Zehe, A., Grotzschel, R., (1988) Phys Stat. Sol. (a), 109, p. 493