Shallow-donor States In Semiconductor Heterostructures Within The Fractional-dimensional Space Approach

dc.creatorOliveira L.E.
dc.creatorDuque C.A.
dc.creatorPorras-Montenegro N.
dc.creatorDe Dios-Leyva M.
dc.date2001
dc.date2015-06-26T14:43:37Z
dc.date2015-11-26T14:16:51Z
dc.date2015-06-26T14:43:37Z
dc.date2015-11-26T14:16:51Z
dc.date.accessioned2018-03-28T21:17:53Z
dc.date.available2018-03-28T21:17:53Z
dc.identifier
dc.identifierPhysica B: Condensed Matter. , v. 302-303, n. , p. 72 - 76, 2001.
dc.identifier9214526
dc.identifier10.1016/S0921-4526(01)00408-2
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0034967785&partnerID=40&md5=30beb1c7bca7799ec1608d8b5e3ebe61
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/95113
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/95113
dc.identifier2-s2.0-0034967785
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1243179
dc.descriptionShallow-donor states in quantum-sized semiconductor heterostructures are studied within the fractional-dimensional space approach. Calculations were performed for the binding energies of the ground state of donors in GaAs-(Ga,Al)As quantum wells, cylindrical quantum-well wires, and spherical quantum dots. Fractional-dimensional theoretical results are shown to be in good agreement with previous variational calculations. © 2001 Elsevier Science B.V.
dc.description302-303
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dc.languageen
dc.publisher
dc.relationPhysica B: Condensed Matter
dc.rightsfechado
dc.sourceScopus
dc.titleShallow-donor States In Semiconductor Heterostructures Within The Fractional-dimensional Space Approach
dc.typeActas de congresos


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