Artículos de revistas
Fractional-dimensional Space Approach To The Study Of Shallow-donor States In Symmetric-coupled Gaas-ga1-xalxas Multiple Quantum Wells
Registro en:
Physica B: Condensed Matter. Elsevier Science Publishers B.v., Amsterdam, Netherlands, v. 296, n. 4, p. 342 - 350, 2001.
9214526
10.1016/S0921-4526(00)00577-9
2-s2.0-0035056204
Autor
Matos-Abiague A.
Oliveira L.E.
De Dios-Leyva M.
Institución
Resumen
The fractional-dimensional space approach is extended to study shallow-donor states in symmetric-coupled GaAs-Ga1-xAlxAs multiple quantum wells. In this scheme, the real anisotropic `shallow donor+multiple quantum well' semiconductor system is mapped, for each shallow-donor state, into an effective fractional-dimensional isotropic environment, and the fractional dimension is essentially related to the anisotropy of the actual semiconductor system. Calculations within the fractional-dimensional space scheme were performed for the binding energies of 1s-like shallow-donor states in various positions in symmetric-coupled double and triple GaAs-Ga1-xAlxAs semiconductor quantum wells, and for varying well and barrier thicknesses. Fractional-dimensional theoretical results are shown to be in good agreement with previous variational theoretical calculations. 296 4 342 350 Miller, R.C., Gossard, A.C., Tsang, W.T., Munteanu, O., (1982) Phys. Rev. B, 25, p. 3871 Shanabrook, B.V., Comas, J., Perry, T.A., Merlin, R., (1984) Phys. Rev. B, 29, p. 7096 Helm, M., Peeters, F.M., DeRosa, F., Colas, E., Harbison, J.P., Florez, L.T., (1991) Phys. Rev. B, 43, p. 13983 Bastard, G., (1981) Phys. Rev. B, 24, p. 4714 Greene, R.L., Bajaj, K.K., (1985) Solid State Commun., 45, p. 825 Mailhiot, C., Chang, Y.-C., McGill, T.C., (1982) Phys. Rev. B, 26, p. 4449 Masselink, W.T., Chang, Y.-C., Morkoç, H., (1983) Phys. Rev. B, 28, p. 7373 Oliveira, L.E., Falicov, L.M., (1986) Phys. Rev. B, 34, p. 8676 Oliveira, L.E., (1988) Phys. Rev. B, 38, p. 10641 Fraizzoli, S., Bassani, F., Buczko, R., (1990) Phys. Rev. B, 41, p. 5096 Oliveira, L.E., Mahan, G.D., (1993) Phys. Rev. B, 47, p. 2406 Kawai, H., Kaneko, J., Watanabe, N., (1985) J. Appl. Phys., 58, p. 1263 Chaudhuri, S., (1983) Phys. Rev. B, 28, p. 4480 Lane, P., Greene, R.L., (1986) Phys. Rev. B, 33, p. 5871 Chen, H., Zhou, S., (1987) Phys. Rev. B, 36, p. 9581 Thoai, D.B.T., (1991) Physica B, 175, p. 373 Belyavskii, V.I., Gol'dfarb, M.V., Shevtsov, S.V., (1997) Semiconductors, 31, p. 246 Belyavskii, V.I., Gol'dfarb, M.V., Kopaev, Yu.V., (1997) Semiconductors, 31, p. 936 Stillinger, F.H., (1977) J. Math. Phys., 18, p. 1224 He, X-F., (1991) Phys. Rev. B, 43, p. 2063 Mathieu, H., Lefebvre, P., Christol, P., (1992) Phys. Rev. B, 46, p. 4092 Lefebvre, P., Christol, P., Mathieu, H., (1993) Phys. Rev. B, 48, p. 17308 P. Lefebvre, P. Christol, H. Mathieu, (1995) S. Glutsch, Phys. Rev. B, 52, p. 5756. , and references therein Orani, D., Polimeni, A., Patanè, A., Capizzi, M., Martelli, F., D'Andrea, A., Tomassini, N., Colocci, M., (1997) Phys. Stat. Sol. (A), 164, p. 107 Thilagam, A., (1997) Phys. Rev. B, 55, p. 7804 Thilagam, A., (1997) Phys. Rev. B, 56, p. 4665 Thilagam, A., (1997) Phys. Rev. B, 56, p. 9798 Thilagam, A., (1997) J. Appl. Phys., 82, p. 5753 Tanguy, C., Lefebvre, P., Mathieu, H., Elliot, R.J., (1997) J. Appl. Phys., 82, p. 798 De Dios-Leyva, M., Bruno-Alfonso, A., Matos-Abiague, A., Oliveira, L.E., (1997) J. Phys.: Condens. Matter, 9, p. 8477 Matos-Abiague, A., Oliveira, L.E., De Dios-Leyva, M., (1998) Phys. Rev. B, 58, p. 4072 Reyes-Gómez, E., Oliveira, L.E., De Dios-Leyva, M., (1999) J. Appl. Phys., 85, p. 4045 Reyes-Gómez, E., Matos-Abiague, A., Perdomo-Leiva, C.A., De Dios-Leyva, M., Oliveira, L.E., (2000) Phys. Rev. B, 61, p. 13104