Formation Of Nickel Silicides Onto As-doped Silicon Using A Thin Pt/pd Interlayer

dc.creatorReis R.W.
dc.creatorDos Santos Filho S.G.
dc.creatorDoi I.
dc.creatorSwart J.W.
dc.date2004
dc.date2015-06-26T14:25:32Z
dc.date2015-11-26T14:15:17Z
dc.date2015-06-26T14:25:32Z
dc.date2015-11-26T14:15:17Z
dc.date.accessioned2018-03-28T21:16:12Z
dc.date.available2018-03-28T21:16:12Z
dc.identifier
dc.identifierProceedings - Electrochemical Society. , v. 3, n. , p. 357 - 362, 2004.
dc.identifier
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-17044387765&partnerID=40&md5=f82c4777fe1bad657ce8b51befae85d6
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/94781
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/94781
dc.identifier2-s2.0-17044387765
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1242759
dc.descriptionThermal stability of nickel suicide was reached using a thin Pt (1.5nm)/Pd (3.0 nm) interlayer between As-doped silicon and nickel (30 nm). A shallow contact structure was fabricated and characterized using Ni (Pt/Pd) suicides formed at temperature ranging from 350 to 800 °C for 120s. The Ni (Pt/Pd) suicide films were characterized by Rutherford Backscattering (RBS) spectrometry, X-Ray Diffraction (XRD) analysis, Atomic Force Microscopy (AFM) and four probe measurements. From these techniques, crystallographic phases (XRD), surface and interface micro-roughness (AFM) and, suicide stoichiometry and thickness by using RUMP simulations of the RBS spectra were obtained. The nickel suicide structure resulted a mixture of several phases (Ni 2Si, NiSi 2, Ni 3Si or Ni 31Si 12) with an average stoichiometry NiSi for rapid thermal annealing at 600 °C for 120 s. Also, this processing led to suicide with low interface RMS roughness (<0.7nm) and low resistivity (25.7 μΩ.cm). I-V curves were extracted from silicided n+p diodes, resulting in low reverse current density of 220 nA/cm 2 and ideality factor of 1.3.
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dc.description357
dc.description362
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dc.languageen
dc.publisher
dc.relationProceedings - Electrochemical Society
dc.rightsfechado
dc.sourceScopus
dc.titleFormation Of Nickel Silicides Onto As-doped Silicon Using A Thin Pt/pd Interlayer
dc.typeActas de congresos


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