dc.creatorMestanza S.N.M.
dc.creatorBiasotto C.
dc.creatorCosta A.C.
dc.creatorDias G.O.
dc.creatorDoi I.
dc.creatorDiniz J.A.
dc.creatorSwart J.W.
dc.date2004
dc.date2015-06-26T14:25:24Z
dc.date2015-11-26T14:15:08Z
dc.date2015-06-26T14:25:24Z
dc.date2015-11-26T14:15:08Z
dc.date.accessioned2018-03-28T21:16:00Z
dc.date.available2018-03-28T21:16:00Z
dc.identifier
dc.identifierProceedings - Electrochemical Society. , v. 3, n. , p. 201 - 206, 2004.
dc.identifier
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-17044381743&partnerID=40&md5=8e4d2a1cd7027aea9dea46ea0e822cbc
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/94748
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/94748
dc.identifier2-s2.0-17044381743
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1242713
dc.descriptionIn this work we report the results of the fabrication and simulation of antireflective coating (ARC) of SiO2 deposited on a silicon substrate, to various thickness. We found that for a thickness of 100nm of SiO2 ARC we have high transmittance on a broad spectral range 500-1000nm. We also obtained maximum transmittance in the three basic colors for the thickness value of 70nm, with values that oscillate between 80 e 85 %. However the values are almost punctual and are in small spectral range of +/- 30nm. The film thickness between 100 and 420 nm were found by ellipsometry by using a fixed refractive index of 1.46. The ARCs were obtained from the plasma source of the Electron Cyclotron Resonance-Chemical Vapor Deposition (ECR-CVD), at room temperature. Spectroscopic properties of SiO2 films, studied through Fourier transform infrared spectroscopy (FTIR), revealed a high structural quality and the presence of Si-O bonds.
dc.description3
dc.description
dc.description201
dc.description206
dc.descriptionWhite, M., Lampe, D., Blaha, F., Mack, I., (1974) IEEE J. Solid-State Circuits SC-9, p. 1
dc.descriptionFurumiya, M., Ohkubo, H., Muramatsu, Y., Kurosawa, S., Okamoto, F., Fujimoto, Y., Nakashiba, Y., (2001) IEEE Trans. Electron Devices, 48 (10), p. 2221
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dc.descriptionMestanza, S.N.M., Manera, L.T., De Sousa, A.C.T., Silva, I.F., Doi, I., Swart, J.W., (2003) Proc. 2003 Electrochemical Society Workshop on Microelectronics and Devices, 2003 (9), p. 428
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dc.descriptionHeavens, O.S., (1991) Optical Properties of Thin Solid Films, p. 56. , Dover Publications, New York
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dc.descriptionEdwards, D.F., (1985) Handbook of Optical Constants of Solids, p. 555. , E. D. Palik, Editor, Academic Press, Washington, D.C
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dc.languageen
dc.publisher
dc.relationProceedings - Electrochemical Society
dc.rightsfechado
dc.sourceScopus
dc.titleHigh Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective Coating
dc.typeActas de congresos


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