dc.creator | Mestanza S.N.M. | |
dc.creator | Biasotto C. | |
dc.creator | Costa A.C. | |
dc.creator | Dias G.O. | |
dc.creator | Doi I. | |
dc.creator | Diniz J.A. | |
dc.creator | Swart J.W. | |
dc.date | 2004 | |
dc.date | 2015-06-26T14:25:24Z | |
dc.date | 2015-11-26T14:15:08Z | |
dc.date | 2015-06-26T14:25:24Z | |
dc.date | 2015-11-26T14:15:08Z | |
dc.date.accessioned | 2018-03-28T21:16:00Z | |
dc.date.available | 2018-03-28T21:16:00Z | |
dc.identifier | | |
dc.identifier | Proceedings - Electrochemical Society. , v. 3, n. , p. 201 - 206, 2004. | |
dc.identifier | | |
dc.identifier | | |
dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-17044381743&partnerID=40&md5=8e4d2a1cd7027aea9dea46ea0e822cbc | |
dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/94748 | |
dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/94748 | |
dc.identifier | 2-s2.0-17044381743 | |
dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1242713 | |
dc.description | In this work we report the results of the fabrication and simulation of antireflective coating (ARC) of SiO2 deposited on a silicon substrate, to various thickness. We found that for a thickness of 100nm of SiO2 ARC we have high transmittance on a broad spectral range 500-1000nm. We also obtained maximum transmittance in the three basic colors for the thickness value of 70nm, with values that oscillate between 80 e 85 %. However the values are almost punctual and are in small spectral range of +/- 30nm. The film thickness between 100 and 420 nm were found by ellipsometry by using a fixed refractive index of 1.46. The ARCs were obtained from the plasma source of the Electron Cyclotron Resonance-Chemical Vapor Deposition (ECR-CVD), at room temperature. Spectroscopic properties of SiO2 films, studied through Fourier transform infrared spectroscopy (FTIR), revealed a high structural quality and the presence of Si-O bonds. | |
dc.description | 3 | |
dc.description | | |
dc.description | 201 | |
dc.description | 206 | |
dc.description | White, M., Lampe, D., Blaha, F., Mack, I., (1974) IEEE J. Solid-State Circuits SC-9, p. 1 | |
dc.description | Furumiya, M., Ohkubo, H., Muramatsu, Y., Kurosawa, S., Okamoto, F., Fujimoto, Y., Nakashiba, Y., (2001) IEEE Trans. Electron Devices, 48 (10), p. 2221 | |
dc.description | Fossum, E.R., (1997) IEEE Trans. Electron Devices, 44 (10), p. 1689 | |
dc.description | Mestanza, S.N.M., Manera, L.T., De Sousa, A.C.T., Silva, I.F., Doi, I., Swart, J.W., (2003) Proc. 2003 Electrochemical Society Workshop on Microelectronics and Devices, 2003 (9), p. 428 | |
dc.description | Popov, O.A., Waldron, H., (1989) J. Vac. Sci. Technol., A7 (3), p. 914 | |
dc.description | Heavens, O.S., (1991) Optical Properties of Thin Solid Films, p. 56. , Dover Publications, New York | |
dc.description | Aroutiounian, V.M., Maroutyan, K.R., Zatikyan, A.L., Touryan, K.J., (2002) Thin Solid Films, 403, p. 517 | |
dc.description | Edwards, D.F., (1985) Handbook of Optical Constants of Solids, p. 555. , E. D. Palik, Editor, Academic Press, Washington, D.C | |
dc.description | Pliskin, W.A., (1977) J. Vac. Sci. Technol. A, 14 (5), p. 1064 | |
dc.language | en | |
dc.publisher | | |
dc.relation | Proceedings - Electrochemical Society | |
dc.rights | fechado | |
dc.source | Scopus | |
dc.title | High Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective Coating | |
dc.type | Actas de congresos | |