Suspended Membranes Made By Silicon Nitride Deposited By Ecr-cvd

dc.creatorBiasotto C.
dc.creatorMonte B.
dc.creatorNeli R.R.
dc.creatorRamos A.C.S.
dc.creatorDiniz I.A.
dc.creatorMoshkalyov S.A.
dc.creatorDoi I.
dc.creatorSwart J.W.
dc.date2004
dc.date2015-06-26T14:25:23Z
dc.date2015-11-26T14:15:05Z
dc.date2015-06-26T14:25:23Z
dc.date2015-11-26T14:15:05Z
dc.date.accessioned2018-03-28T21:15:57Z
dc.date.available2018-03-28T21:15:57Z
dc.identifier
dc.identifierProceedings - Electrochemical Society. , v. 3, n. , p. 119 - 124, 2004.
dc.identifier
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-17044427609&partnerID=40&md5=d5df3ae784695bc3801e8863e7032e97
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/94739
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/94739
dc.identifier2-s2.0-17044427609
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1242698
dc.descriptionNitride (SiNx) insulators have been deposited by low temperature (20°C) electron cyclotron resonance (ECR) plasma on Si substrates. Characterization by Fourier transform infra-red (FTIR) spectrometry analyses reveal the presence of Si-N, Si-H and N-H bonds in the silicon nitride films. The refractive indexes between 1.77 and 2.9 and the thickness between 300 nm and 460 nm were measured by ellipsometry. With these thickness values, the deposition rates of 13 to 16 nm/min, the BHF etch rates of 0.7 to 454 nm/min, and the KOH etch rates lower than 1 nm/min were determined. The nitrides, which presented high resistance to BHF and KOH etchings, were used to fabricate suspended membranes on Si substrates. Scanning Electron Microscopy (SEM) inspections were used to investigate the SiNx resistance to KOH etchings. The results indicated that formed SiNx films are suitable membranes for micro-electro-mechanical systems (MEMS).
dc.description3
dc.description
dc.description119
dc.description124
dc.descriptionDiniz, J.A., Doi, I., Swart, J.W., (2003) Mater. Charact., 50 (2-3), p. 135
dc.descriptionMoshkalyov, S.A., Diniz, J.A., Swart, J.W., Tatsch, P.J., Machida, M., (1997) J. Vac. Sci. Technol., B15, p. 2682
dc.descriptionMadou, M.M., (2002) "Fundamentals of Microfabrication - The Science of Miniaturization", Second Edition, , CRC Press
dc.descriptionNeli, R.R., (2001), Master Thesis, FEEC/UNICAMP
dc.languageen
dc.publisher
dc.relationProceedings - Electrochemical Society
dc.rightsfechado
dc.sourceScopus
dc.titleSuspended Membranes Made By Silicon Nitride Deposited By Ecr-cvd
dc.typeActas de congresos


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