Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High Temperature

dc.creatorTeixeira R.C.
dc.creatorDoi I.
dc.creatorZakia M.B.P.
dc.creatorDiniz J.A.
dc.creatorSwart J.W.
dc.date2004
dc.date2015-06-26T14:24:19Z
dc.date2015-11-26T14:13:22Z
dc.date2015-06-26T14:24:19Z
dc.date2015-11-26T14:13:22Z
dc.date.accessioned2018-03-28T21:14:05Z
dc.date.available2018-03-28T21:14:05Z
dc.identifier
dc.identifierMaterials Science And Engineering B: Solid-state Materials For Advanced Technology. , v. 112, n. 2-3 SPEC. ISS., p. 160 - 164, 2004.
dc.identifier9215107
dc.identifier10.1016/j.mseb.2004.05.025
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-4344561556&partnerID=40&md5=320c5072808e97679b4f30e082c5efa9
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/94409
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/94409
dc.identifier2-s2.0-4344561556
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1242255
dc.descriptionIn this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman spectroscopy. The samples were prepared on Si(1 0 0) n-type substrates coated with 100 nm of SiO2. The films were deposited in the temperature range of 750-900°C at pressures of 5 and 10 Torr. The as-deposited poly-Si films are highly crystalline and show tensile stress. Micro-Raman measurements show that the residual stress is reduced as the deposition temperature is increased and, above 800°C, tensile stress is reduced to less than 150 MPa. These results indicate that high quality, high crystalline and low strained poly-Si films can be obtained in this type of reactor using higher deposition temperature. © 2004 Elsevier B.V. All rights reserved.
dc.description112
dc.description2-3 SPEC. ISS.
dc.description160
dc.description164
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dc.languageen
dc.publisher
dc.relationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.rightsfechado
dc.sourceScopus
dc.titleMicro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High Temperature
dc.typeArtículos de revistas


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