Artículos de revistas
The Protective Effect Of Thin Amorphous Hydrogenated Carbon A-c:h Films During Metallisation Of Metal-carbon-oxide-silicon (mcos) Diodes
Registro en:
Microelectronics Journal. , v. 34, n. 9, p. 877 - 880, 2003.
262692
10.1016/S0026-2692(03)00008-9
2-s2.0-0038486938
Autor
Balachova O.V.
Braga E.S.
Institución
Resumen
Capacitance-voltage (C-V) characteristics of the as-grown metal(Al)-carbon-oxide(SiO2)-semiconductor(Si) structures are examined at the frequency of 1 MHz and compared with the C-V characteristics of the conventional metal(Al)-SiO2-Si (MOS) structures. The density of the oxide charge Qo/q is extracted from the experimental results. Qo/q was found to be 1×1012cm-2 for the MOS structures and 7×1011cm-2 for the metal-carbon-oxide-silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers. © 2003 Elsevier Science Ltd. All rights reserved. 34 9 877 880 Aisenberg, S., Chabot, R., Ion-beam deposition of thin films of diamondlike carbon (1971) J. Appl. Phys., 42 (7), pp. 2953-2958 Angus, J.C., Koidl, P., Donits, S., Carbon thin films (1984) Plasma Deposited Thin Films, pp. 110-111. , J. Mort, & F. Jansen. Boca Raton, FL: Chemical Rubber Press Fourches, N., Turban, G., Plasma deposition of hydrogenated amorphous carbon: Growth rates, properties and structures (1994) Thin Solid Films, 240, pp. 28-38 Ojha, S.M., Holland, L., Some characteristics of hard carbonaceous films (1977) Thin Solid Films, 40, pp. L31-L32 Tsai, H.-C., Bogy, D.B., Characterization of diamondlike carbon films and their application as overcoats on thin film media for magnetic recording (1987) J. Vac. Sci. Technol., A 5, pp. 3287-3312 Bubenzer, A., Dischler, B., Brandt, G., Koidl, P., Rf-plasma deposited amorphous hydrogenated hard carbon thin films: Preparation, properties, and applications (1983) J. Appl. Phys., 54 (8), pp. 4590-4595 Lee, K.-R., Eun, K.Y., Tribology of diamond-like carbon coated VCR head drums (1996) Mater. Sci. Engng, A 209 (1-2), pp. 264-269 Butter, R., Lettington, A.H., Rushton, N., Chandra, L., Allen, M., In vitro studies of DLC coatings with silicon intermediate layer (1995) Diamond Relat. Mater., 4 (5-6), pp. 857-861 Holland, L., Ojha, S.M., Deposition of hard and insulating carbonaceous films on an r.f. target in a butane plasma (1976) Thin Solid Films, 38, pp. L17-L19 Holland, L., Ojha, S.M., The growth of carbon films with random atomic structure from ion impact damage in a hydrocarbon plasma (1979) Thin Solid Films, 58, pp. 107-116 Sze, S.M., (1981) Physics of Semiconductor Devices, Second Ed., , New York: Wiley Grove, A.S., Deal, B.E., Snow, E.H., Sah, C.T., Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures (1965) Solid-State Electron., 8, p. 145 Tareev, B., (1979) Physics of Dielectric Materials, pp. 116-117. , Moscow: Mir Publisher Balachova, O.V., Alves, M.A.R., Swart, J.W., Braga, E.S., Cescato, L., CF4 plasma etching of materials used in microelectronics manufacturing (2000) Microelectron. J., 31 (3), pp. 213-215 Balachova, O.V., Swart, J.W., Braga, E.S., Cescato, L., Permittivity of amorphous hydrogenated carbon (a-C:H) films as a function of thermal annealing (2001) Microelectron. J., 32 (8), pp. 673-678