dc.creatorFischer C.
dc.creatorDiniz J.A.
dc.date2005
dc.date2015-06-26T14:09:57Z
dc.date2015-11-26T14:10:10Z
dc.date2015-06-26T14:09:57Z
dc.date2015-11-26T14:10:10Z
dc.date.accessioned2018-03-28T21:10:49Z
dc.date.available2018-03-28T21:10:49Z
dc.identifier
dc.identifierProceedings - Electrochemical Society. , v. PV 2005-08, n. , p. 408 - 415, 2005.
dc.identifier
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-31744434279&partnerID=40&md5=e47ea834b09296705f060dce5a137d04
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/93921
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/93921
dc.identifier2-s2.0-31744434279
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1241444
dc.descriptionA microwave source system have been used to increase silicon etch rate in KOH solution by a factor of about 2, when compared to conventional process. In this work, using a commercial microwave oven (operated at 850W), a home-made microwave system and a polytetrafluoroethylene (PTFE) reactor, where the silicon etching is processed with KOH-water solution, were developed. Silicon wafers, previously oxidized and patterned with standard photo-lithographic process, were etched using 2.5, 5 and 10 M KOH-water solution. The process temperature was manually controlled. The etch solution passes through a heat exchanger for cooling purpose and is pumped back to the reactor. Etch rate of about 1.38 μm/min for the [100] silicon crystal plane and 2.7 nm/min for thermal silicon oxide was achieved.
dc.descriptionPV 2005-08
dc.description
dc.description408
dc.description415
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dc.languageen
dc.publisher
dc.relationProceedings - Electrochemical Society
dc.rightsfechado
dc.sourceScopus
dc.titleMicrowave Enhanced Silicon Koh Etching
dc.typeActas de congresos


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