Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields

dc.creatorDuque, C. A.
dc.creatorOliveira, L. E.
dc.creatorDios-Leyva, M. de
dc.date2006-09-01
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T13:56:10Z
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T13:56:10Z
dc.date.accessioned2018-03-28T21:08:07Z
dc.date.available2018-03-28T21:08:07Z
dc.identifierBrazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 1038-1041, 2006.
dc.identifier0103-9733
dc.identifierS0103-97332006000600064
dc.identifier10.1590/S0103-97332006000600064
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332006000600064
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600064
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/25724
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/25724
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1240779
dc.descriptionThe effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1-xAl xAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.
dc.description1038
dc.description1041
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageen
dc.publisherSociedade Brasileira de Física
dc.relationBrazilian Journal of Physics
dc.rightsaberto
dc.sourceSciELO
dc.subjectQuantum well
dc.subjectMagnetic field
dc.subjectElectric field
dc.subjectExciton transitions
dc.titleCorrelated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución