Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells

dc.creatorReyes-Gómez, E.
dc.creatorPerdomo Leiva, C. A.
dc.creatorOliveira, L. E.
dc.creatorDios-Leyva, M. de
dc.date2006-09-01
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T11:42:36Z
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T11:42:36Z
dc.date.accessioned2018-03-28T20:46:18Z
dc.date.available2018-03-28T20:46:18Z
dc.identifierBrazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 858-861, 2006.
dc.identifier0103-9733
dc.identifierS0103-97332006000600016
dc.identifier10.1590/S0103-97332006000600016
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332006000600016
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600016
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/25723
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/25723
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1235099
dc.descriptionThe dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g^-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g^-factor theoretically evaluated is found in good agrement with available experimental measurements.
dc.description858
dc.description861
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageen
dc.publisherSociedade Brasileira de Física
dc.relationBrazilian Journal of Physics
dc.rightsaberto
dc.sourceSciELO
dc.subjectMagnetic fields
dc.subjectQuantum wells
dc.subjectg-factor
dc.subjectCyclotron effective mass
dc.titleEffects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells
dc.typeArtículos de revistas


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