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Mostrando ítems 31-40 de 2061
Singular-ended spline interpolation for two-dimensional boundary element analysis
(John Wiley & Sons LtdW SussexInglaterra, 2000)
On Cubic Étale Algebras
(, 1997)
Extrapolation of AR models using cubic splines for damage progression evaluation in composite structures
(2021-02-01)
This paper presents the potentiality of the use of extrapolation of a set of Auto-Regressive (AR) models to inspect a future damage sensitive indices based on changes in one-step-ahead prediction errors. The key idea is ...
Spectral intensities in cubic systems. II. The MoCl63- system in cubic elpasolite crystals
(Sociedad Mexicana de Fisica, 1998)
The visible and near infrared luminescence spectra of MoCl63- in Cs2NaMCl6 (M=Sc, Y, ln) and MoBr63- in Cs2NaYBr6 have been reported between 15 000 cm-1 and 3000 cm-1 at liquid helium temperatures. It has been observed ...
Structural and vibrational study of cubic Sb2O3 under high pressure
(Amer Physical Soc, 2014)
Structural, electronic and magnetic properties of copper(I) cubic clusters
(Elsevier Ltd, 2020-11-02)
We report the molecular and electronic structure, and the calculated electronic excitation energies, using the time dependent density functional methodologies (TD-DFT), and the induced magnetic field (Bi) of a series of ...
Optical characterization of cubic AlGaN/GaN quantum wells
(Wiley-Blackwell, 2002-07-16)
Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements ...
Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
(Iop Publishing Ltd, 1999-04-01)
Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular ...
Optical characterization of cubic AlGaN/GaN quantum wells
(Wiley-Blackwell, 2002-07-16)
Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements ...