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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers

Tabata, A; Leite, JR; Lima, AP; Silveira, E; Lemos, V; Frey, T; As, DJ; Schikora, D; Lischka, K (Amer Inst PhysicsWoodburyEUA, 1999)

Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution

Mendonca, CAC; Cotta, MA; Meneses, EA; Carvalho, MMG (American Physical SocCollege PkEUA, 1998)

On the onset of InAs islanding on InP: influence of surface steps

Cotta, MA; Mendonca, CAC; Meneses, EA; deCarvalho, MMG (Elsevier Science BvAmsterdamHolanda, 1997)

PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

BERNUSSI, AA; IIKAWA, F; MOTISUKE, P; BASMAJI, P (Elsevier Science BvAmsterdamHolanda, 1991)

On the surface chemistry and the reuse of sulfur-doped TiO2 films as photocatalysts

BENTO, RODRIGO T.; CORREA, OLANDIR V.; PILLIS, MARINA F. (2021)

Observation of CuPt and CuAu I-type ordered structure in HgCdTe grown by isothermal vapour phase epitaxy

Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth (Elsevier Science, 2003-07)

Ordered structures, CuPt and CuAu I types in HgCdTe are reported for the first time. Hg1-xCdxTe thin crystals were grown by isothermal vapour phase epitaxy (ISOVPE) method on a CdTe substrate and they were observed by ...

Resistencia a oxidacao de um aco comercial recoberto por um filme de Cr2O3 por meio da tecnica de deposicao quimica em fase vapor

PILLIS, M.F.; GALEGO, M.; SERNA, M.M.; CORREA, O.V.; RAMANATHAN, L.V.; CONGRESSO BRASILEIRO DE ENGENHARIA E CIENCIA DOS MATERIAIS, 19. (2014)

Assessment of a non-linear diffusive-convective model for the ISOVPE MCT growth

Moyano, Edgardo A.; Scarpettini, Alberto Franco; Gilabert, Ulises Eduardo; Trigubo, Alicia Beatriz (Elsevier Science Sa, 2000-09)

Hg1-uCduTe (MCT) is the most important semiconductor for infrared detection. The ISOVPE technique allows good quality MCT epilayers . For technological and scientific reasons it is interesting to have a model which accurately ...

ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations

Gilabert, Ulises Eduardo; Heredia, Eduardo Armando; Trigubo, Alicia Beatriz (Elsevier Science, 2006-09)

Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished ...

Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates

Ribeiro, E; Bernussi, AA; Maltez, RL; Carvalho, W; Gobbi, AL; Ugarte, D (American Physical SocCollege PkEUA, 2006)

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