The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled ...

In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point ...

In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been ...

This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the ...

This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the ...

This paper presents a systematic study of the temperature lowering influence on the saturation threshold voltage degradation in ultrathin deep-submicrometer fully depleted silicon-on-insulator (SOI) MOSFETs. It is observed ...

This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic operation. Experimental results of drain current, subthreshold slope, maximum transconductance at low electric field, and ...

This work proposes a physically-based definition for the threshold voltage, VTH, of junctionless nanowire transistors and a methodology to extract it. The VTH is defined as the point of equal magnitude for the drift and ...