Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, ...

We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage ...

In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different ...

We investigate the electric-pulse-induced resistance switching in manganite systems. We find a "complementarity" effect where the contact resistance of electrodes at opposite ends show variations of opposite sign and is ...

In this paper we study the role of noise in the context of resistive switching phenomena by means of experiments and numerical simulations. Experiments are conducted on a manganite sample. We show that the addition of ...

The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed ...

Highly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies ...

Highly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies ...

Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation ...