This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique-a combination of hydrogen ion ...

We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a ...

Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics ...

Porous silicon is characterized by a large specific area and a large chemical reactivity. These characteristics, although attractive for sensing applications, led to an unstable behaviour. Different oxidation methods have ...

We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this ...

The present work reports the thermal annealing process, the number of layer and electrochemical process effect in the optical response quality of Bragg and microcavity devices that were applied as organic solvent sensors. ...