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Determinación del Mecanismo de Oxigenación del CdTe obtenido por RF Sputtering Reactivo con Magnetrón en un Plasma de Ar-N2O
(Sociedad Mexicana de Fisica, 2013-01-16)
Estudio de los parámetros de proyección térmica por plasma atmosférico y sinterización convencional para la fabricación de blancos de TIO2 para deposición física de vapor asistida por plasma con sputtering
(Universidad EAFITMaestría en Física AplicadaEscuela de Ciencias. Departamento de Ciencias BásicasMedellín, 2019)
Improvements of plasma immersion ion implantation (PIII) and deposition (PIII&D) processing for materials surface modification
(2013-08-25)
Plasma immersion ion implantation (PIII) process is a three dimensional surface modification method that is quite mature and well known to the surface engineering community nowadays, especially to those working in the field ...
Improvements of plasma immersion ion implantation (PIII) and deposition (PIII&D) processing for materials surface modification
(2013-08-25)
Plasma immersion ion implantation (PIII) process is a three dimensional surface modification method that is quite mature and well known to the surface engineering community nowadays, especially to those working in the field ...
Feasibility of RF Sputtering and PIIID for production of thin films from red mud
(ABM, ABC, ABPol, 2014-10-01)
During the extraction of aluminum from bauxite, a waste of oxides containing traces of heavy metals in a highly alkaline matrix, called Red Mud (RM), is produced. In this study RM is characterized and the feasibility of ...
Preparation of films from aluminum acetylacetonate by plasma sputtering
(2013-07-01)
Aluminum acetylacetonate has been reported as a precursor for the deposition of alumina films using different approaches. In this work, alumina-containing films were prepared by plasma sputtering this compound, spread ...
Preparation of films from aluminum acetylacetonate by plasma sputtering
(2013-07-01)
Aluminum acetylacetonate has been reported as a precursor for the deposition of alumina films using different approaches. In this work, alumina-containing films were prepared by plasma sputtering this compound, spread ...
Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering
(2006-09-01)
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow ...