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Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
(Sociedade Brasileira Fisica, 2006-09-01)
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films ...
Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
(Sociedade Brasileira Fisica, 2006-09-01)
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films ...
Urbach energy parameter of flash evaporated amorphous gallium arsenide films
(2002-04-01)
The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from ...
Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
(Sociedade Brasileira Fisica, 2014)
Comparative study of the effects of gallium-aluminum-arsenide laser photobiomodulation and healing oil on skin wounds in wistar rats: a histomorphometric study
(Photomedicine and Laser Surgery, 2019)