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Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy
(Ieee, 2019-01-01)
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...
Device-based threading dislocation assessment in germanium hetero-epitaxy
(2019-08-01)
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...
Computerized dlts system to characterize deep levels in semiconductors
(Revista Mexicana de Física, 2009)
Influence of CH4/H-2 reactive ion etching on the deep levels of Si-doped AlxGa1-xAs (x=0.25)
(Amer Inst PhysicsWoodbury, 1996)