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Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Kluwer Academic Publ, 2004-07-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning ...
Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method
(2006-08-01)
Lanthanum-modified bismuth titanate, Bi4 - xLaxTi3O12 (BLT) ceramics, with x ranging from 0 to 0.75 were prepared by the polymeric precursor method. Orthorhombicity of the system is decreased with the increase of lanthanum ...
Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method
(2006-08-01)
Lanthanum-modified bismuth titanate, Bi4 - xLaxTi3O12 (BLT) ceramics, with x ranging from 0 to 0.75 were prepared by the polymeric precursor method. Orthorhombicity of the system is decreased with the increase of lanthanum ...
Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Kluwer Academic Publ, 2004-07-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning ...
Effect of lanthanum and lead doping on the microstructure and visible light photocatalysis of bismuth titanate prepared by the oxidant peroxide method (OPM)
(2015-11-01)
Pure (Bi<inf>12</inf>TiO<inf>20</inf>) and La- and Pb-doped (Bi<inf>12-x</inf>La<inf>x</inf>TiO<inf>20</inf> e Bi<inf>12-x</inf>Pb<inf>x</inf>TiO<inf>20</inf>, with x up to 1.50) bismuth titanates were prepared by the ...
Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Taylor & Francis Ltd, 2004-01-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The ...
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
(Elsevier B.V. Sa, 2008-04-24)
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a ...
Dielectric properties of pure and lanthanum modified bismuth titanate thin films
(Elsevier B.V. Sa, 2008-04-24)
We investigated the dielectric properties of pure and lanthanum modified bismuth titanate thin films obtained by the polymeric precursor method. X-ray diffraction of the film annealed at 300 degrees C for 2h indicates a ...