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A multisampling time-domain CMOS imager with synchronous readout circuit
(SpringerDordrechtHolanda, 2008)
Layout techniques for radiation hardening of standard CMOS active pixel sensors
(SpringerDordrechtHolanda, 2008)
Temporal Noise Analysis and Measurements of CMOS Active Pixel Sensor Operating in Time Domain
(Ieee, 2013-01-01)
Image sensors in standard CMOS technology are increasing used for consumer, industrial and scientific applications due to their low cost, high level of integration and low power consumption. Further, image sensors in ...
Temporal noise analysis and measurements of CMOS active pixel sensor operating in time domain
(2013-01-01)
Image sensors in standard CMOS technology are increasing used for consumer, industrial and scientific applications due to their low cost, high level of integration and low power consumption. Further, image sensors in ...
Modeling of a cmos active pixel image sensor towards sensor integration with microfluidic devices
(Instituto Tecnológico y de Estudios Superiores de Monterrey, 2010-05-01)
Recently, microfluidic devices have received considerable attention because of the many potential applications in medicine and environment monitoring. In such systems, cells and particles suspended in fluids can be manipulated ...
Metodologia para caracterização e comparação de sensores de píxeis ativos integrados em tecnologia CMOS
(Universidade Federal de Minas GeraisUFMG, 2016-04-26)
The active pixel circuits, manufactured using CMOS (Complementary Metal-Oxide- Semiconductor) technology, have been widely used due to factors such as low cost and high integration capability since it is possible integrating ...
A multisampling time-domain CMOS imager with synchronous readout circuit
(Springer, 2008-11-01)
A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The proposed multisampling architecture requires only a single bit per pixel memory instead of 8 ...
A multisampling time-domain CMOS imager with synchronous readout circuit
(Springer, 2008-11-01)
A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The proposed multisampling architecture requires only a single bit per pixel memory instead of 8 ...
CMOS-based active pixel for low-light-level detection: Analysis and measurements
(2007-12-01)
An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance ...
CMOS-based active pixel for low-light-level detection: Analysis and measurements
(2007-12-01)
An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 μm standard CMOS technology, is presented. A simple and accurate model for the junction capacitance ...