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Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfaces
(2020-09-01)
The search for new and low-power switching devices involving the integration of semiconductor thin films is of interest, and has led to renewed research because such devices may exhibit innovative properties. Here, we ...
2DEG on a cylindrical shell with a screw dislocation
(Elsevier, 2017)
Metallic behavior in STO/LAO heterostructures with non-uniformly atomic interfaces
(Elsevier, 2020-06-16)
The search for new and low-power switching devices involving the integration of semiconductor thin films is of interest, and has led to renewed research because such devices may exhibit innovative properties. Here, we ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Two-dimensional electron gas with universal subbands at the surface of SrTiO 3
(Nature Publishing Group, 2011-01)
As silicon is the basis of conventional electronics, so strontium titanate (SrTiO3) is the foundation of the emerging field of oxide electronics1,2. SrTiO3 is the preferred template for the creation of exotic, two-dimensional ...
Direct preparation of standard functional interfaces in oxide heterostructures for 2DEG analysis through beam-induced platinum contacts
(2018-09-24)
Two-dimensional electron gas (2DEG) in SrTiO3/LaAlO3 heterostructures has been extensively studied in the last few years; however, little attention has been given to a practical way to contact electrically the low dimensional ...
Interference effects in nonplanar wires with a two-dimensional electron gas
(1998-12-01)
We have studied the universal conductance fluctuations (UCF) due to quantum interface in a two-dimensional electron gas (2DEG) grown on the substrates with pre-patterned, sub-micron wires. The dependence of UCF on the angle ...
Interference effects in nonplanar wires with a two-dimensional electron gas
(V S V Co. Ltd, 1998-01-01)
We have studied the universal conductance fluctuations (UCF) due to quantum interface in a two-dimensional electron gas (2DEG) grown on the substrates with pre-patterned, sub-micron wires. The dependence of UCF on the angle ...