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Evaporated thin films of insulating poly-(tetrabromo-p-phenylenediselenide)
(PERGAMON-ELSEVIER SCIENCE LTD, 2002)
It has been shown that thin insulating film at the interface transparent conductive oxide/organic electroluminescent film could improve the performance of organic electroluminescent diodes (OLED). Such insulating film can ...
Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
(2014)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...
PCM glazing systems
(John Wiley & Sons LtdW SussexInglaterra, 1997)
Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET
(Univ Fed Sao Carlos, Dept Engenharia Materials, 2014-11-01)
Alternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO2/Al2O3 is tested concerning its use as a transparent insulating layer for use in FETs. ...
Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
(2013-10-01)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...
Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
(2013-10-01)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. ...
Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
(Trans Tech Publications Ltd, 2014-01-01)
Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. ...
Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
(Trans Tech Publications Ltd, 2015)