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Ordered phases in the extended Hubbard model
(Elsevier B.V., 1994-04-02)
A novel method to probe the diverse phases for the extended Hubbard model (EHM), including the correlated hopping term, is presented. We extend an effective medium approach [1] to a bipartite lattice, allowing for charge- ...
Transporte eletrônico e propriedades termodinâmicas de nanobiomoléculas
(Universidade Federal do Rio Grande do NorteBRUFRNPrograma de Pós-Graduação em FísicaFísica da Matéria Condensada; Astrofísica e Cosmologia; Física da Ionosfera, 2009-12-18)
We use a tight-binding formulation to investigate the transmissivity and the currentvoltage (I_V) characteristics of sequences of double-strand DNA molecules. In order to reveal the relevance of the underlying correlations ...
Ordered phases in the extended Hubbard model
(Elsevier B.V., 2014)
Current–voltage characteristics of double-strand DNA sequences
(Elsevier, 2009-09-07)
Ordered phases in the extended Hubbard model
(Elsevier B.V., 2014)
Electronic structure of silicon-based nanostructures
(2007-08-30)
We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ ...
Electronic structure of silicon-based nanostructures
(2007-08-30)
We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ ...
Localization properties of a tight-binding electronic model on the Apollonian network
(Brasil, 2008)
An investigation on the properties of electronic states of a tight-binding Hamiltonian on the Apollonian network is presented. This structure, which is defined based on the Apollonian packing problem, has been explored ...
Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential
(IOP PUBLISHING, 2009)
We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp3s ∗ tight-binding approximation including spin for the hole level ...