Buscar
Mostrando ítems 1-10 de 1334
Influence of temperature on the microstructure and electrical properties of BBT thin films
(Taylor & Francis Ltd, 2003-01-01)
The BBT films were prepared by a spin-coating process from the polymeric precursor method (Pechini process). In order to study the influence of the temperature on the BBT microstructure and electrical properties, the films ...
Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method
(Elsevier B.V., 2004-02-02)
The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical ...
Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method
(Elsevier B.V., 2004-02-02)
The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical ...
Impact of defects on the electrical properties of BiFeO3 thin films
(Taylor & Francis Ltd, 2020-02-17)
The impact of defects on the electrical properties of bismuth ferrite thin films has been studied. Secondary phases and oxygen vacancies were the main defects considered. Thin films with secondary phases show higher ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...
Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Taylor & Francis Ltd, 2004-01-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The ...
Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Taylor & Francis Ltd, 2004-01-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The ...